No Cover Image

Journal article 925 views 138 downloads

Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

Stephen A. O. Russell, Amador Perez-Tomas, Christopher F. McConville, Craig A. Fisher, Dean P. Hamilton, Philip A. Mawby, Michael R. Jennings, Mike Jennings Orcid Logo

IEEE Journal of the Electron Devices Society, Volume: 5, Issue: 4, Pages: 256 - 261

Swansea University Author: Mike Jennings Orcid Logo

Check full text

DOI (Published version): 10.1109/JEDS.2017.2706321

Abstract

A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overa...

Full description

Published in: IEEE Journal of the Electron Devices Society
ISSN: 2168-6734
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa49903
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2019-04-08T10:16:43Z
last_indexed 2019-07-29T22:27:45Z
id cronfa49903
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2019-07-29T15:02:44.7316522</datestamp><bib-version>v2</bib-version><id>49903</id><entry>2019-04-05</entry><title>Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating</title><swanseaauthors><author><sid>e0ba5d7ece08cd70c9f8f8683996454a</sid><ORCID>0000-0003-3270-0805</ORCID><firstname>Mike</firstname><surname>Jennings</surname><name>Mike Jennings</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2019-04-05</date><deptcode>EEEG</deptcode><abstract>A method to improve thermal management of &#x3B2;-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.</abstract><type>Journal Article</type><journal>IEEE Journal of the Electron Devices Society</journal><volume>5</volume><journalNumber>4</journalNumber><paginationStart>256</paginationStart><paginationEnd>261</paginationEnd><publisher/><issnElectronic>2168-6734</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2017</publishedYear><publishedDate>2017-12-31</publishedDate><doi>10.1109/JEDS.2017.2706321</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2019-07-29T15:02:44.7316522</lastEdited><Created>2019-04-05T09:37:22.2171599</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Stephen A. O.</firstname><surname>Russell</surname><order>1</order></author><author><firstname>Amador</firstname><surname>Perez-Tomas</surname><order>2</order></author><author><firstname>Christopher F.</firstname><surname>McConville</surname><order>3</order></author><author><firstname>Craig A.</firstname><surname>Fisher</surname><order>4</order></author><author><firstname>Dean P.</firstname><surname>Hamilton</surname><order>5</order></author><author><firstname>Philip A.</firstname><surname>Mawby</surname><order>6</order></author><author><firstname>Michael R.</firstname><surname>Jennings</surname><order>7</order></author><author><firstname>Mike</firstname><surname>Jennings</surname><orcid>0000-0003-3270-0805</orcid><order>8</order></author></authors><documents><document><filename>0049903-05042019093937.pdf</filename><originalFilename>russell2017v2.pdf</originalFilename><uploaded>2019-04-05T09:39:37.0830000</uploaded><type>Output</type><contentLength>3162441</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><embargoDate>2019-04-05T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2019-07-29T15:02:44.7316522 v2 49903 2019-04-05 Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2019-04-05 EEEG A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved. Journal Article IEEE Journal of the Electron Devices Society 5 4 256 261 2168-6734 31 12 2017 2017-12-31 10.1109/JEDS.2017.2706321 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2019-07-29T15:02:44.7316522 2019-04-05T09:37:22.2171599 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Stephen A. O. Russell 1 Amador Perez-Tomas 2 Christopher F. McConville 3 Craig A. Fisher 4 Dean P. Hamilton 5 Philip A. Mawby 6 Michael R. Jennings 7 Mike Jennings 0000-0003-3270-0805 8 0049903-05042019093937.pdf russell2017v2.pdf 2019-04-05T09:39:37.0830000 Output 3162441 application/pdf Version of Record true 2019-04-05T00:00:00.0000000 true eng
title Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
spellingShingle Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
Mike Jennings
title_short Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
title_full Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
title_fullStr Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
title_full_unstemmed Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
title_sort Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Stephen A. O. Russell
Amador Perez-Tomas
Christopher F. McConville
Craig A. Fisher
Dean P. Hamilton
Philip A. Mawby
Michael R. Jennings
Mike Jennings
format Journal article
container_title IEEE Journal of the Electron Devices Society
container_volume 5
container_issue 4
container_start_page 256
publishDate 2017
institution Swansea University
issn 2168-6734
doi_str_mv 10.1109/JEDS.2017.2706321
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
published_date 2017-12-31T04:01:10Z
_version_ 1763753140172095488
score 11.037297

Similar Items