Jennings, M., Russell, S. A. O., Perez-Tomas, A., McConville, C. F., Fisher, C. A., Hamilton, D. P., . . . Jennings, M. R. (2017). Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), pp. 256-261. doi:10.1109/JEDS.2017.2706321
Chicago Style CitationJennings, Mike, Stephen A. O. Russell, Amador Perez-Tomas, Christopher F. McConville, Craig A. Fisher, Dean P. Hamilton, Philip A. Mawby, and Michael R. Jennings. "Heteroepitaxial Beta-Ga2O3 On 4H-SiC for an FET With Reduced Self Heating." IEEE Journal of the Electron Devices Society 5, no. 4 (2017): 256-261.
MLA CitationJennings, Mike, et al. "Heteroepitaxial Beta-Ga2O3 On 4H-SiC for an FET With Reduced Self Heating." IEEE Journal of the Electron Devices Society 5.4 (2017): 256-261.