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Performance of a high resolution chemically amplified electron beam resist at various beam energies

D.X. Yang, A. Frommhold, A. McClelland, J. Roth, M. Rosamond, E.H. Linfield, J. Osmond, Richard Palmer Orcid Logo, A.P.G. Robinson

Microelectronic Engineering, Volume: 155, Pages: 97 - 101

Swansea University Author: Richard Palmer Orcid Logo

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DOI (Published version): 10.1016/j.mee.2016.03.010

Abstract

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sen...

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Published in: Microelectronic Engineering
ISSN: 0167-9317
Published: Elsevier BV 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa49234
first_indexed 2019-03-18T20:01:26Z
last_indexed 2020-10-20T02:59:19Z
id cronfa49234
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spelling 2020-10-19T14:33:46.7520512 v2 49234 2019-03-18 Performance of a high resolution chemically amplified electron beam resist at various beam energies 6ae369618efc7424d9774377536ea519 0000-0001-8728-8083 Richard Palmer Richard Palmer true false 2019-03-18 ACEM A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV. Journal Article Microelectronic Engineering 155 97 101 Elsevier BV 0167-9317 1 4 2016 2016-04-01 10.1016/j.mee.2016.03.010 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2020-10-19T14:33:46.7520512 2019-03-18T14:28:18.8526309 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering D.X. Yang 1 A. Frommhold 2 A. McClelland 3 J. Roth 4 M. Rosamond 5 E.H. Linfield 6 J. Osmond 7 Richard Palmer 0000-0001-8728-8083 8 A.P.G. Robinson 9 0049234-13052019124958.pdf yang2016v2.pdf 2019-05-13T12:49:58.6530000 Output 2453242 application/pdf Version of Record true 2019-05-13T00:00:00.0000000 Distributed under the terms of a Creative Commons Attribution (CC-BY-4.0) true eng
title Performance of a high resolution chemically amplified electron beam resist at various beam energies
spellingShingle Performance of a high resolution chemically amplified electron beam resist at various beam energies
Richard Palmer
title_short Performance of a high resolution chemically amplified electron beam resist at various beam energies
title_full Performance of a high resolution chemically amplified electron beam resist at various beam energies
title_fullStr Performance of a high resolution chemically amplified electron beam resist at various beam energies
title_full_unstemmed Performance of a high resolution chemically amplified electron beam resist at various beam energies
title_sort Performance of a high resolution chemically amplified electron beam resist at various beam energies
author_id_str_mv 6ae369618efc7424d9774377536ea519
author_id_fullname_str_mv 6ae369618efc7424d9774377536ea519_***_Richard Palmer
author Richard Palmer
author2 D.X. Yang
A. Frommhold
A. McClelland
J. Roth
M. Rosamond
E.H. Linfield
J. Osmond
Richard Palmer
A.P.G. Robinson
format Journal article
container_title Microelectronic Engineering
container_volume 155
container_start_page 97
publishDate 2016
institution Swansea University
issn 0167-9317
doi_str_mv 10.1016/j.mee.2016.03.010
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering
document_store_str 1
active_str 0
description A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.
published_date 2016-04-01T19:51:04Z
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score 11.047609

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