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Performance of a high resolution chemically amplified electron beam resist at various beam energies

D.X. Yang, A. Frommhold, A. McClelland, J. Roth, M. Rosamond, E.H. Linfield, J. Osmond, Richard Palmer Orcid Logo, A.P.G. Robinson

Microelectronic Engineering, Volume: 155, Pages: 97 - 101

Swansea University Author: Richard Palmer Orcid Logo

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DOI (Published version): 10.1016/j.mee.2016.03.010

Abstract

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sen...

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Published in: Microelectronic Engineering
ISSN: 0167-9317
Published: Elsevier BV 2016
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa49234
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Abstract: A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.
College: Faculty of Science and Engineering
Start Page: 97
End Page: 101

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