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Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

Natalia Seoane, Guillermo Indalecio, Daniel Nagy, Karol Kalna Orcid Logo, Antonio J. Garcia-Loureiro

IEEE Transactions on Electron Devices, Volume: 65, Issue: 2, Pages: 456 - 462

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/TED.2017.2785325

Abstract

Three cross sections (rectangular, bullet shaped, and triangular), resulting from the fabrication process, of nanoscale In0.53Ga0.47As-on-insulator FinFETs with a gate length of 10.4 nm are modeled using in-house 3-D finite-element density-gradient quantum-corrected drift–diffusion and Monte Carlo s...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa38327
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spelling 2018-03-12T15:15:05.6494221 v2 38327 2018-01-29 Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2018-01-29 EEEG Three cross sections (rectangular, bullet shaped, and triangular), resulting from the fabrication process, of nanoscale In0.53Ga0.47As-on-insulator FinFETs with a gate length of 10.4 nm are modeled using in-house 3-D finite-element density-gradient quantum-corrected drift–diffusion and Monte Carlo simulations. We investigate the impact of the shape on I – V characteristics and on the variability induced by metal grain granularity (MGG), line-edge roughness (LER), and random dopants (RDs) and compared with their combined effect. The more triangular the cross section, the lower the OFF-current, the drain-induced-barrier-lowering, and the subthreshold slope. The ION/IOFF ratio is three times higher for the triangular-shaped FinFET than for the rectangular-shape one. Independent of the cross section, the MGG variations are the preeminent fluctuations affecting the FinFETs, with four to two times larger σVT than that from the LER and the RDs, respectively. However, the variability induced threshold voltage ( VT ) shift is minimal for the MGG (around 2 mV), but VT shift increases 4-fold and 15-fold for the LER and the RDs, respectively. The cross-sectional shape has a very small influence in VT and OFF-current of the MGG, LER, and RD variabilities, both separated and in combination, with standard deviation differences of only 4% among the different device shapes. Finally, the statistical sum of the three sources of variability can predict simulated combined variability with only a minor overestimation. Journal Article IEEE Transactions on Electron Devices 65 2 456 462 0018-9383 1557-9646 Density gradient (DG) quantum corrections, drift–diffusion (DD), FinFET, line-edge roughness (LER), metal grain granularity (MGG), random dopants (RDs) 31 12 2018 2018-12-31 10.1109/TED.2017.2785325 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2018-03-12T15:15:05.6494221 2018-01-29T10:23:33.2779700 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Guillermo Indalecio 2 Daniel Nagy 3 Karol Kalna 0000-0002-6333-9189 4 Antonio J. Garcia-Loureiro 5 0038327-29012018143224.pdf seoane2018.pdf 2018-01-29T14:32:24.2800000 Output 1806167 application/pdf Accepted Manuscript true 2018-01-29T00:00:00.0000000 true eng
title Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
spellingShingle Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
Karol Kalna
title_short Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
title_full Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
title_fullStr Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
title_full_unstemmed Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
title_sort Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Natalia Seoane
Guillermo Indalecio
Daniel Nagy
Karol Kalna
Antonio J. Garcia-Loureiro
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 65
container_issue 2
container_start_page 456
publishDate 2018
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/TED.2017.2785325
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Three cross sections (rectangular, bullet shaped, and triangular), resulting from the fabrication process, of nanoscale In0.53Ga0.47As-on-insulator FinFETs with a gate length of 10.4 nm are modeled using in-house 3-D finite-element density-gradient quantum-corrected drift–diffusion and Monte Carlo simulations. We investigate the impact of the shape on I – V characteristics and on the variability induced by metal grain granularity (MGG), line-edge roughness (LER), and random dopants (RDs) and compared with their combined effect. The more triangular the cross section, the lower the OFF-current, the drain-induced-barrier-lowering, and the subthreshold slope. The ION/IOFF ratio is three times higher for the triangular-shaped FinFET than for the rectangular-shape one. Independent of the cross section, the MGG variations are the preeminent fluctuations affecting the FinFETs, with four to two times larger σVT than that from the LER and the RDs, respectively. However, the variability induced threshold voltage ( VT ) shift is minimal for the MGG (around 2 mV), but VT shift increases 4-fold and 15-fold for the LER and the RDs, respectively. The cross-sectional shape has a very small influence in VT and OFF-current of the MGG, LER, and RD variabilities, both separated and in combination, with standard deviation differences of only 4% among the different device shapes. Finally, the statistical sum of the three sources of variability can predict simulated combined variability with only a minor overestimation.
published_date 2018-12-31T03:48:29Z
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score 11.037581

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