Kalna, K., Seoane, N., Indalecio, G., Nagy, D., & Garcia-Loureiro, A. J. (2018). Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability. IEEE Transactions on Electron Devices, 65(2), pp. 456-462. doi:10.1109/TED.2017.2785325

Kalna, Karol, Natalia Seoane, Guillermo Indalecio, Daniel Nagy, and Antonio J. Garcia-Loureiro. "Impact of Cross-Sectional Shape On 10-nm Gate Length InGaAs FinFET Performance and Variability." IEEE Transactions On Electron Devices 65, no. 2 (2018): 456-462.

Kalna, Karol, et al. "Impact of Cross-Sectional Shape On 10-nm Gate Length InGaAs FinFET Performance and Variability." IEEE Transactions On Electron Devices 65.2 (2018): 456-462.