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Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

S. J. Duffy, B. Benbakhti, M. Mattalah, W. Zhang, M. Bouchilaoun, M. Boucherta, K. Kalna, N. Bourzgui, H. Maher, A. Soltani, Karol Kalna Orcid Logo

ECS Journal of Solid State Science and Technology, Volume: 6, Issue: 11, Pages: S3040 - S3043

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1149/2.0111711jss

Abstract

An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer usi...

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Published in: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769 2162-8777
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa35704
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last_indexed 2018-02-09T05:27:10Z
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spelling 2017-11-14T15:53:57.3269712 v2 35704 2017-09-28 Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2017-09-28 EEEG An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer using Ar+ ion beam, and by (ii) forming recessed contact metallization using an optimized Ti/Al/Ni/Au (12 nm/200 nm/40 nm/100 nm) multilayers. We found that a low RC of ∼0.3 Ω.mm can be achieved by etching closer to the 2-Dimensional Electron Gas (2DEG) at an optimum etching depth, 75% of the barrier thickness, followed by a rapid thermal annealing at 850°C. This is due to the very small distance between the alloy and the 2DEG (higher electric field) as shown by 2D drift-diffusion simulations combined with Transmission Line Model (TLM) extractions. Journal Article ECS Journal of Solid State Science and Technology 6 11 S3040 S3043 2162-8769 2162-8777 AlGaN/GaN HEMTs, Ohmic Contact, TLM Model 7 9 2017 2017-09-07 10.1149/2.0111711jss COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-11-14T15:53:57.3269712 2017-09-28T15:38:37.7803889 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering S. J. Duffy 1 B. Benbakhti 2 M. Mattalah 3 W. Zhang 4 M. Bouchilaoun 5 M. Boucherta 6 K. Kalna 7 N. Bourzgui 8 H. Maher 9 A. Soltani 10 Karol Kalna 0000-0002-6333-9189 11 0035704-03102017150650.pdf duffy2017.pdf 2017-10-03T15:06:50.0970000 Output 1666635 application/pdf Version of Record true 2017-10-03T00:00:00.0000000 true eng
title Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
spellingShingle Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
Karol Kalna
title_short Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
title_full Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
title_fullStr Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
title_full_unstemmed Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
title_sort Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 S. J. Duffy
B. Benbakhti
M. Mattalah
W. Zhang
M. Bouchilaoun
M. Boucherta
K. Kalna
N. Bourzgui
H. Maher
A. Soltani
Karol Kalna
format Journal article
container_title ECS Journal of Solid State Science and Technology
container_volume 6
container_issue 11
container_start_page S3040
publishDate 2017
institution Swansea University
issn 2162-8769
2162-8777
doi_str_mv 10.1149/2.0111711jss
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer using Ar+ ion beam, and by (ii) forming recessed contact metallization using an optimized Ti/Al/Ni/Au (12 nm/200 nm/40 nm/100 nm) multilayers. We found that a low RC of ∼0.3 Ω.mm can be achieved by etching closer to the 2-Dimensional Electron Gas (2DEG) at an optimum etching depth, 75% of the barrier thickness, followed by a rapid thermal annealing at 850°C. This is due to the very small distance between the alloy and the 2DEG (higher electric field) as shown by 2D drift-diffusion simulations combined with Transmission Line Model (TLM) extractions.
published_date 2017-09-07T03:44:30Z
_version_ 1763752091552055296
score 11.016235

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