Journal article 999 views
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation
Applied Surface Science, Volume: 190, Issue: 1-4, Pages: 467 - 474
Swansea University Author: Vincent Teng
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DOI (Published version): 10.1016/S0169-4332(01)00920-5
Abstract
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation
Published in: | Applied Surface Science |
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ISSN: | 01694332 |
Published: |
2002
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URI: | https://cronfa.swan.ac.uk/Record/cronfa31376 |
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2016-12-06T17:08:51.1232417 v2 31376 2016-12-06 The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2016-12-06 EEEG Journal Article Applied Surface Science 190 1-4 467 474 01694332 31 12 2002 2002-12-31 10.1016/S0169-4332(01)00920-5 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-12-06T17:08:51.1232417 2016-12-06T17:08:51.1232417 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering S.P. Wilks 1 K.S. Teng 2 P.R. Dunstan 3 R.H. Williams 4 Vincent Teng 0000-0003-4325-8573 5 |
title |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation |
spellingShingle |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation Vincent Teng |
title_short |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation |
title_full |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation |
title_fullStr |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation |
title_full_unstemmed |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation |
title_sort |
The passivation of atomic scale defects present on III–V semiconductor laser facets: an STM/STS investigation |
author_id_str_mv |
98f529f56798da1ba3e6e93d2817c114 |
author_id_fullname_str_mv |
98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng |
author |
Vincent Teng |
author2 |
S.P. Wilks K.S. Teng P.R. Dunstan R.H. Williams Vincent Teng |
format |
Journal article |
container_title |
Applied Surface Science |
container_volume |
190 |
container_issue |
1-4 |
container_start_page |
467 |
publishDate |
2002 |
institution |
Swansea University |
issn |
01694332 |
doi_str_mv |
10.1016/S0169-4332(01)00920-5 |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
document_store_str |
0 |
active_str |
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published_date |
2002-12-31T03:38:20Z |
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1763751703719444480 |
score |
11.037056 |