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The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy

P. R. Dunstan, S. P. Wilks, K. S. Teng, M. A. Pritchard, R. H. Williams, Vincent Teng Orcid Logo

Journal of Applied Physics, Volume: 86, Issue: 10, Start page: 5636

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1063/1.371573

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1999
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URI: https://cronfa.swan.ac.uk/Record/cronfa31375
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first_indexed 2016-12-06T20:37:53Z
last_indexed 2018-02-09T05:18:13Z
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spelling 2016-12-06T17:07:52.3105368 v2 31375 2016-12-06 The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2016-12-06 EEEG Journal Article Journal of Applied Physics 86 10 5636 00218979 31 12 1999 1999-12-31 10.1063/1.371573 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-12-06T17:07:52.3105368 2016-12-06T17:07:52.3261304 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering P. R. Dunstan 1 S. P. Wilks 2 K. S. Teng 3 M. A. Pritchard 4 R. H. Williams 5 Vincent Teng 0000-0003-4325-8573 6
title The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
spellingShingle The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
Vincent Teng
title_short The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
title_full The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
title_fullStr The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
title_full_unstemmed The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
title_sort The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 P. R. Dunstan
S. P. Wilks
K. S. Teng
M. A. Pritchard
R. H. Williams
Vincent Teng
format Journal article
container_title Journal of Applied Physics
container_volume 86
container_issue 10
container_start_page 5636
publishDate 1999
institution Swansea University
issn 00218979
doi_str_mv 10.1063/1.371573
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 1999-12-31T03:38:20Z
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score 11.037056

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