Journal article 994 views
The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
P. R. Dunstan,
S. P. Wilks,
K. S. Teng,
M. A. Pritchard,
R. H. Williams,
Vincent Teng 
Journal of Applied Physics, Volume: 86, Issue: 10, Start page: 5636
Swansea University Author:
Vincent Teng
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.371573
Abstract
The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
| Published in: | Journal of Applied Physics |
|---|---|
| ISSN: | 00218979 |
| Published: |
1999
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa31375 |
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| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
10 |
| Start Page: |
5636 |