Journal article 1348 views
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Natalia Seoane,
Guillermo Indalecio,
Enrique Comesana,
Manuel Aldegunde,
Antonio J. Garcia-Loureiro,
Karol Kalna
IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 466 - 472
Swansea University Author: Karol Kalna
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DOI (Published version): 10.1109/TED.2013.2294213
Abstract
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Published in: | IEEE Transactions on Electron Devices |
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2014
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URI: | https://cronfa.swan.ac.uk/Record/cronfa21848 |
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2015-07-30T02:02:59Z |
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2018-02-09T04:59:44Z |
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2017-03-02T13:22:37.1792495 v2 21848 2015-05-30 Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2015-05-30 ACEM Journal Article IEEE Transactions on Electron Devices 61 2 466 472 31 12 2014 2014-12-31 10.1109/TED.2013.2294213 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2017-03-02T13:22:37.1792495 2015-05-30T21:11:56.7505793 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Guillermo Indalecio 2 Enrique Comesana 3 Manuel Aldegunde 4 Antonio J. Garcia-Loureiro 5 Karol Kalna 0000-0002-6333-9189 6 |
title |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET |
spellingShingle |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET Karol Kalna |
title_short |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET |
title_full |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET |
title_fullStr |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET |
title_full_unstemmed |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET |
title_sort |
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET |
author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 |
author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
author |
Karol Kalna |
author2 |
Natalia Seoane Guillermo Indalecio Enrique Comesana Manuel Aldegunde Antonio J. Garcia-Loureiro Karol Kalna |
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Journal article |
container_title |
IEEE Transactions on Electron Devices |
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61 |
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2 |
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466 |
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2014 |
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Swansea University |
doi_str_mv |
10.1109/TED.2013.2294213 |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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published_date |
2014-12-31T06:42:54Z |
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1821386761592373248 |
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11.047631 |