Kalna, K., Seoane, N., Indalecio, G., Comesana, E., Aldegunde, M., & Garcia-Loureiro, A. J. (2014). Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET. IEEE Transactions on Electron Devices, 61(2), pp. 466-472. doi:10.1109/TED.2013.2294213

Kalna, Karol, Natalia Seoane, Guillermo Indalecio, Enrique Comesana, Manuel Aldegunde, and Antonio J. Garcia-Loureiro. "Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET." IEEE Transactions On Electron Devices 61, no. 2 (2014): 466-472.

Kalna, Karol, et al. "Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET." IEEE Transactions On Electron Devices 61.2 (2014): 466-472.