Journal article 1118 views
Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
N Seoane,
G Indalecio,
E Comesana,
A. J Garcia-Loureiro,
M Aldegunde,
K Kalna,
Karol Kalna 
IEEE Electron Device Letters, Volume: 34, Issue: 2, Pages: 205 - 207
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/led.2012.2230313
Abstract
Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
| Published in: | IEEE Electron Device Letters |
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| ISSN: | 0741-3106 1558-0563 |
| Published: |
2013
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa14323 |
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| Item Description: |
The first work on variability of device characteristics of a novel, n-type non-planar InGaAs MOSFETs with a high indium content channel is studied using parallel 3-D quantum corrected drift-diffusion simulations. The device variability is paramount for future digital applications for the 14 or 11 nm CMOS technology with substantially funded R&D. Published in the best letter journal (my first ever paper there) in the field. The work is the result of intensive research by Marie-Curie Fellow I am hosting. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
2 |
| Start Page: |
205 |
| End Page: |
207 |