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Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET

N Seoane, G Indalecio, E Comesana, A. J Garcia-Loureiro, M Aldegunde, K Kalna, Karol Kalna Orcid Logo

IEEE Electron Device Letters, Volume: 34, Issue: 2, Pages: 205 - 207

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/led.2012.2230313

Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2013
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URI: https://cronfa.swan.ac.uk/Record/cronfa14323
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first_indexed 2013-07-23T12:13:22Z
last_indexed 2018-02-09T04:45:40Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2017-03-02T13:34:53.9176118</datestamp><bib-version>v2</bib-version><id>14323</id><entry>2013-09-03</entry><title>Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>IEEE Electron Device Letters</journal><volume>34</volume><journalNumber>2</journalNumber><paginationStart>205</paginationStart><paginationEnd>207</paginationEnd><publisher/><issnPrint>0741-3106</issnPrint><issnElectronic>1558-0563</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2013</publishedYear><publishedDate>2013-12-31</publishedDate><doi>10.1109/led.2012.2230313</doi><url/><notes>The first work on variability of device characteristics of a novel, n-type non-planar InGaAs MOSFETs with a high indium content channel is studied using parallel 3-D quantum corrected drift-diffusion simulations. The device variability is paramount for future digital applications for the 14 or 11 nm CMOS technology with substantially funded R&amp;D. Published in the best letter journal (my first ever paper there) in the field. The work is the result of intensive research by Marie-Curie Fellow I am hosting.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2017-03-02T13:34:53.9176118</lastEdited><Created>2013-09-03T06:36:35.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>N</firstname><surname>Seoane</surname><order>1</order></author><author><firstname>G</firstname><surname>Indalecio</surname><order>2</order></author><author><firstname>E</firstname><surname>Comesana</surname><order>3</order></author><author><firstname>A. J</firstname><surname>Garcia-Loureiro</surname><order>4</order></author><author><firstname>M</firstname><surname>Aldegunde</surname><order>5</order></author><author><firstname>K</firstname><surname>Kalna</surname><order>6</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>7</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2017-03-02T13:34:53.9176118 v2 14323 2013-09-03 Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Electron Device Letters 34 2 205 207 0741-3106 1558-0563 31 12 2013 2013-12-31 10.1109/led.2012.2230313 The first work on variability of device characteristics of a novel, n-type non-planar InGaAs MOSFETs with a high indium content channel is studied using parallel 3-D quantum corrected drift-diffusion simulations. The device variability is paramount for future digital applications for the 14 or 11 nm CMOS technology with substantially funded R&D. Published in the best letter journal (my first ever paper there) in the field. The work is the result of intensive research by Marie-Curie Fellow I am hosting. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-03-02T13:34:53.9176118 2013-09-03T06:36:35.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering N Seoane 1 G Indalecio 2 E Comesana 3 A. J Garcia-Loureiro 4 M Aldegunde 5 K Kalna 6 Karol Kalna 0000-0002-6333-9189 7
title Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
spellingShingle Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
Karol Kalna
title_short Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_full Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_fullStr Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_full_unstemmed Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_sort Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 N Seoane
G Indalecio
E Comesana
A. J Garcia-Loureiro
M Aldegunde
K Kalna
Karol Kalna
format Journal article
container_title IEEE Electron Device Letters
container_volume 34
container_issue 2
container_start_page 205
publishDate 2013
institution Swansea University
issn 0741-3106
1558-0563
doi_str_mv 10.1109/led.2012.2230313
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2013-12-31T03:16:26Z
_version_ 1763750325808791552
score 11.037581

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