Kalna, K., Seoane, N., Indalecio, G., Comesana, E., Garcia-Loureiro, A. J., Aldegunde, M., & Kalna, K. (2013). Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET. IEEE Electron Device Letters, 34(2), pp. 205-207. doi:10.1109/led.2012.2230313

Kalna, Karol, N. Seoane, G. Indalecio, E. Comesana, A. J. Garcia-Loureiro, M. Aldegunde, and K. Kalna. "Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET." IEEE Electron Device Letters 34, no. 2 (2013): 205-207.

Kalna, Karol, et al. "Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET." IEEE Electron Device Letters 34.2 (2013): 205-207.