Journal article 946 views
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
Brahim Benbakhti,
Antonio Martinez,
Karol Kalna
,
Geert Hellings,
Geert Eneman,
Kristin De Meyer,
Marc Meuris
IEEE Transactions on Nanotechnology, Volume: 11, Issue: 4, Pages: 808 - 817
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/tnano.2012.2199514
Abstract
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
Published in: | IEEE Transactions on Nanotechnology |
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ISSN: | 1536-125X 1941-0085 |
Published: |
2012
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URI: | https://cronfa.swan.ac.uk/Record/cronfa12691 |
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2017-03-02T12:57:30.8324597 v2 12691 2013-09-03 Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Transactions on Nanotechnology 11 4 808 817 1536-125X 1941-0085 31 12 2012 2012-12-31 10.1109/tnano.2012.2199514 The work summarises the final results of a three-year FP7 STREP project DUALOGIC (€ 9.1M). It combines state-of-the-art simulations including drift-diffusion approach, ensemble Monte Carlo technique, and Non-Equilibrium Green’s Function method with experiment to forecast the performance of a 20 nm gate length InGaAs channel nMOSFET for a future dual-logic CMOS technology. It gives vision and guidance to semiconductor industry in the R&D for digital application how to achieve improvement in performance, functionality and density. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-03-02T12:57:30.8324597 2013-09-03T06:36:39.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Brahim Benbakhti 1 Antonio Martinez 2 Karol Kalna 0000-0002-6333-9189 3 Geert Hellings 4 Geert Eneman 5 Kristin De Meyer 6 Marc Meuris 7 |
title |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET |
spellingShingle |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET Karol Kalna |
title_short |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET |
title_full |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET |
title_fullStr |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET |
title_full_unstemmed |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET |
title_sort |
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET |
author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 |
author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
author |
Karol Kalna |
author2 |
Brahim Benbakhti Antonio Martinez Karol Kalna Geert Hellings Geert Eneman Kristin De Meyer Marc Meuris |
format |
Journal article |
container_title |
IEEE Transactions on Nanotechnology |
container_volume |
11 |
container_issue |
4 |
container_start_page |
808 |
publishDate |
2012 |
institution |
Swansea University |
issn |
1536-125X 1941-0085 |
doi_str_mv |
10.1109/tnano.2012.2199514 |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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published_date |
2012-12-31T03:14:36Z |
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1763750210484305920 |
score |
11.013371 |