Kalna, K., Benbakhti, B., Martinez, A., Hellings, G., Eneman, G., Meyer, K. D., & Meuris, M. (2012). Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET. IEEE Transactions on Nanotechnology, 11(4), pp. 808-817. doi:10.1109/tnano.2012.2199514

Kalna, Karol, Brahim Benbakhti, Antonio Martinez, Geert Hellings, Geert Eneman, Kristin De Meyer, and Marc Meuris. "Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET." IEEE Transactions On Nanotechnology 11, no. 4 (2012): 808-817.

Kalna, Karol, et al. "Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET." IEEE Transactions On Nanotechnology 11.4 (2012): 808-817.