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A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET

Antonio Martinez Muniz, Antonio Martinez Muniz Orcid Logo

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/sispad.2009.5290218

Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa10583
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first_indexed 2013-07-23T12:06:49Z
last_indexed 2018-02-09T04:39:29Z
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spelling 2013-06-10T12:01:37.7349531 v2 10583 2013-09-03 A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article 31 12 2009 2009-12-31 10.1109/sispad.2009.5290218 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-10T12:01:37.7349531 2013-09-03T06:39:12.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
spellingShingle A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
Antonio Martinez Muniz
title_short A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
title_full A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
title_fullStr A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
title_full_unstemmed A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
title_sort A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
Antonio Martinez Muniz
format Journal article
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/sispad.2009.5290218
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:12:00Z
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score 11.037319

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