Journal article 1207 views
A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors
N. Seoane,
A. Martinez,
Antonio Martinez Muniz 
Journal of Applied Physics, Volume: 114, Issue: 10, Start page: 104307
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1063/1.4820390
Abstract
A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors
| Published in: | Journal of Applied Physics |
|---|---|
| Published: |
2013
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa22747 |
| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
10 |
| Start Page: |
104307 |