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Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

Antonio Martinez, Manuel Aldegunde, Natalia Seoane, Andrew R Brown, John R Barker, Asen Asenov, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Electron Devices, Volume: 58, Issue: 8, Pages: 2209 - 2217

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/ted.2011.2157929

Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2011
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URI: https://cronfa.swan.ac.uk/Record/cronfa10576
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first_indexed 2013-07-23T12:06:47Z
last_indexed 2018-02-09T04:39:28Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-08-17T13:50:16.7370754</datestamp><bib-version>v2</bib-version><id>10576</id><entry>2013-09-03</entry><title>Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>58</volume><journalNumber>8</journalNumber><paginationStart>2209</paginationStart><paginationEnd>2217</paginationEnd><publisher/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2011</publishedYear><publishedDate>2011-12-31</publishedDate><doi>10.1109/ted.2011.2157929</doi><url/><notes>This paper was invited to appear in a special issue of IEEE Transactions on Electron Devices .The simulator developed in this work was used in the benchmarking of quantum transport simulators in the European NANOSIL project. Variability in device behavior due to random dopants and random realization of the Si/SiO2 interfaces are some of the critical problems affecting the miniaturization of CMOS devices. In this paper, the variability of extremely scaled nanowires has been evaluated for the first time, using a full quantum mechanical device simulator.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-08-17T13:50:16.7370754</lastEdited><Created>2013-09-03T06:39:01.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Antonio</firstname><surname>Martinez</surname><order>1</order></author><author><firstname>Manuel</firstname><surname>Aldegunde</surname><order>2</order></author><author><firstname>Natalia</firstname><surname>Seoane</surname><order>3</order></author><author><firstname>Andrew R</firstname><surname>Brown</surname><order>4</order></author><author><firstname>John R</firstname><surname>Barker</surname><order>5</order></author><author><firstname>Asen</firstname><surname>Asenov</surname><order>6</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>7</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2016-08-17T13:50:16.7370754 v2 10576 2013-09-03 Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article IEEE Transactions on Electron Devices 58 8 2209 2217 0018-9383 1557-9646 31 12 2011 2011-12-31 10.1109/ted.2011.2157929 This paper was invited to appear in a special issue of IEEE Transactions on Electron Devices .The simulator developed in this work was used in the benchmarking of quantum transport simulators in the European NANOSIL project. Variability in device behavior due to random dopants and random realization of the Si/SiO2 interfaces are some of the critical problems affecting the miniaturization of CMOS devices. In this paper, the variability of extremely scaled nanowires has been evaluated for the first time, using a full quantum mechanical device simulator. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-08-17T13:50:16.7370754 2013-09-03T06:39:01.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez 1 Manuel Aldegunde 2 Natalia Seoane 3 Andrew R Brown 4 John R Barker 5 Asen Asenov 6 Antonio Martinez Muniz 0000-0001-8131-7242 7
title Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
spellingShingle Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
Antonio Martinez Muniz
title_short Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
title_full Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
title_fullStr Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
title_full_unstemmed Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
title_sort Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez
Manuel Aldegunde
Natalia Seoane
Andrew R Brown
John R Barker
Asen Asenov
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 58
container_issue 8
container_start_page 2209
publishDate 2011
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2011.2157929
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2011-12-31T03:11:59Z
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score 11.013148

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