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Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study

Antonio Martinez Muniz, Antonio Martinez Muniz

IEEE Transactions on Electron Devices, Volume: 57, Issue: 7

Swansea University Author: Antonio Martinez Muniz

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DOI (Published version): 10.1109/ted.2010.2048405

Published in: IEEE Transactions on Electron Devices
Published: 2010
URI: https://cronfa.swan.ac.uk/Record/cronfa10568
first_indexed 2013-07-23T12:06:46Z
last_indexed 2018-02-09T04:39:27Z
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spelling 2013-06-10T12:00:19.9878271 v2 10568 2013-09-03 Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study cd433784251add853672979313f838ec Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 Journal Article IEEE Transactions on Electron Devices 57 7 31 12 2010 2010-12-31 10.1109/ted.2010.2048405 COLLEGE NANME COLLEGE CODE Swansea University 2013-06-10T12:00:19.9878271 2013-09-03T06:38:48.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 2
title Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
spellingShingle Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
Antonio Martinez Muniz
title_short Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
title_full Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
title_fullStr Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
title_full_unstemmed Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
title_sort Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 57
container_issue 7
publishDate 2010
institution Swansea University
doi_str_mv 10.1109/ted.2010.2048405
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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active_str 0
published_date 2010-12-31T03:18:55Z
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