Muniz, A. M. (2010). Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study. IEEE Transactions on Electron Devices, 57(7), . doi:10.1109/ted.2010.2048405

Muniz, Antonio Martinez. "Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study." IEEE Transactions On Electron Devices 57, no. 7 (2010).

Muniz, Antonio Martinez. "Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study." IEEE Transactions On Electron Devices 57.7 (2010).