Journal article 1396 views
Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
Antonio Martinez Muniz,
Antonio Martinez Muniz 
IEEE Transactions on Electron Devices, Volume: 57, Issue: 7
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/ted.2010.2048405
Abstract
Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study
| Published in: | IEEE Transactions on Electron Devices |
|---|---|
| Published: |
2010
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa10568 |
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| College: |
Faculty of Science and Engineering |
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| Issue: |
7 |