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Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer

Qian Zhang, Libin Tang, Menghan Jia, Liqing Yang, Vincent Teng Orcid Logo, Yanfei Lü

Optical Materials, Volume: 173, Start page: 117880

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1016/j.optmat.2026.117880

Published in: Optical Materials
ISSN: 0925-3467
Published: Elsevier BV 2026
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URI: https://cronfa.swan.ac.uk/Record/cronfa71423
first_indexed 2026-02-16T16:01:59Z
last_indexed 2026-03-05T14:16:58Z
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spelling v2 71423 2026-02-16 Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2026-02-16 ACEM Journal Article Optical Materials 173 117880 Elsevier BV 0925-3467 Self-powered; PbS CQDs; Low dark current; PIN heterojunction; Broadband 1 5 2026 2026-05-01 10.1016/j.optmat.2026.117880 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University This work was supported by the National Natural Science Foundation of China (Nos. 61106098 and 61965016); National Key Research and Development Program of China (2019YFB2203404); Yunnan Province Innovation Team Project (2018HC020) and Xingdian Talent Support Program for Young Talents of Yunnan Province. 2026-03-05T14:24:04.3139017 2026-02-16T11:47:44.0129707 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Qian Zhang 1 Libin Tang 2 Menghan Jia 3 Liqing Yang 4 Vincent Teng 0000-0003-4325-8573 5 Yanfei Lü 6
title Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
spellingShingle Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
Vincent Teng
title_short Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
title_full Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
title_fullStr Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
title_full_unstemmed Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
title_sort Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Qian Zhang
Libin Tang
Menghan Jia
Liqing Yang
Vincent Teng
Yanfei Lü
format Journal article
container_title Optical Materials
container_volume 173
container_start_page 117880
publishDate 2026
institution Swansea University
issn 0925-3467
doi_str_mv 10.1016/j.optmat.2026.117880
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2026-05-01T14:24:06Z
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score 11.453587

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