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Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer

Qian Zhang, Libin Tang, Menghan Jia, Liqing Yang, Vincent Teng Orcid Logo, Yanfei Lü

Optical Materials, Volume: 173, Start page: 117880

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1016/j.optmat.2026.117880

Published in: Optical Materials
ISSN: 0925-3467
Published: Elsevier BV 2026
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa71423
Keywords: Self-powered; PbS CQDs; Low dark current; PIN heterojunction; Broadband
College: Faculty of Science and Engineering
Funders: This work was supported by the National Natural Science Foundation of China (Nos. 61106098 and 61965016); National Key Research and Development Program of China (2019YFB2203404); Yunnan Province Innovation Team Project (2018HC020) and Xingdian Talent Support Program for Young Talents of Yunnan Province.
Start Page: 117880

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