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Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
Optical Materials, Volume: 173, Start page: 117880
Swansea University Author:
Vincent Teng
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1016/j.optmat.2026.117880
Abstract
Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer
| Published in: | Optical Materials |
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| ISSN: | 0925-3467 |
| Published: |
Elsevier BV
2026
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa71423 |
| Keywords: |
Self-powered; PbS CQDs; Low dark current; PIN heterojunction; Broadband |
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| College: |
Faculty of Science and Engineering |
| Funders: |
This work was supported by the National Natural Science Foundation of China (Nos. 61106098 and 61965016); National Key Research and Development Program of China (2019YFB2203404); Yunnan Province Innovation Team Project (2018HC020) and Xingdian Talent Support Program for Young Talents of Yunnan Province. |
| Start Page: |
117880 |

