A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy

Tan, Jixiang; Zhou, Zhongfu; Zou, Gongjie

doi:10.3390/electronics13224379

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A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy

Jixiang Tan, Zhongfu Zhou

, Gongjie Zou

Electronics, Volume: 13, Issue: 22, Start page: 4379

Swansea University Authors: Jixiang Tan, Zhongfu Zhou

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DOI (Published version): 10.3390/electronics13224379

Abstract

Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs), as a new material, have the advantages of low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency compared with silicon (Si)-based MOSFETs. Therefore, in many industr...

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Published in:	Electronics
ISSN:	2079-9292
Published:	MDPI AG 2024
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa68293

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spelling	2025-01-16T14:50:48.1828271 v2 68293 2024-11-19 A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy 1dae23a46c9880f565278725ce8064a0 Jixiang Tan Jixiang Tan true false 614fc57cde2ee383718d4f4c462b5fba 0000-0002-0843-7253 Zhongfu Zhou Zhongfu Zhou true false 2024-11-19 Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs), as a new material, have the advantages of low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency compared with silicon (Si)-based MOSFETs. Therefore, in many industrial applications, Si MOSFETs have been replaced by SiC MOSFETs. However, as the switching speed increases exponentially, some problems are amplified, the most serious of which is the overshoot of current and voltage. The increase in voltage and current slope caused by high switching speeds inevitably leads to overshoot, oscillations, and additional losses in the circuit. This paper focusses on the actual performance of the optimised switching strategy (OSS) in circuit testing and combines the existing simulation results to verify the practicability of OSS. In this paper, the optimised switching strategy is introduced first, and then, the LTspice model of SiC MOSFET is established in detail and verifies the feasibility of the OSS through half-bridge circuit simulation. Finally, the test platform is built using a programmable gate drive module (2ASC-12A1HP). Through a 400 V/30 A double-pulse test, the practicality of the OSS is verified. The experiments show that the OSS can greatly improve the switching performance of SiC MOSFETs. Journal Article Electronics 13 22 4379 MDPI AG 2079-9292 grid driver circuit control; silicon carbide MOSFET; double-pulse test circuit; voltage and current overshoot; LTspice 8 11 2024 2024-11-08 10.3390/electronics13224379 COLLEGE NANME COLLEGE CODE Swansea University This research received no external funding. 2025-01-16T14:50:48.1828271 2024-11-19T12:16:35.8164294 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Jixiang Tan 1 Zhongfu Zhou 0000-0002-0843-7253 2 Gongjie Zou 3 68293__33328__e18af9fd13994ffba4901ddc413c8033.pdf 68293.VoR.pdf 2025-01-14T12:18:33.0880897 Output 5868271 application/pdf Version of Record true © 2024 by the authors.This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0/
title	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy
spellingShingle	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy Jixiang Tan Zhongfu Zhou
title_short	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy
title_full	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy
title_fullStr	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy
title_full_unstemmed	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy
title_sort	A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy
author_id_str_mv	1dae23a46c9880f565278725ce8064a0 614fc57cde2ee383718d4f4c462b5fba
author_id_fullname_str_mv	1dae23a46c9880f565278725ce8064a0_*_Jixiang Tan 614fc57cde2ee383718d4f4c462b5fba_*_Zhongfu Zhou
author	Jixiang Tan Zhongfu Zhou
author2	Jixiang Tan Zhongfu Zhou Gongjie Zou
format	Journal article
container_title	Electronics
container_volume	13
container_issue	22
container_start_page	4379
publishDate	2024
institution	Swansea University
issn	2079-9292
doi_str_mv	10.3390/electronics13224379
publisher	MDPI AG
college_str	Faculty of Science and Engineering
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hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description	Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs), as a new material, have the advantages of low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency compared with silicon (Si)-based MOSFETs. Therefore, in many industrial applications, Si MOSFETs have been replaced by SiC MOSFETs. However, as the switching speed increases exponentially, some problems are amplified, the most serious of which is the overshoot of current and voltage. The increase in voltage and current slope caused by high switching speeds inevitably leads to overshoot, oscillations, and additional losses in the circuit. This paper focusses on the actual performance of the optimised switching strategy (OSS) in circuit testing and combines the existing simulation results to verify the practicability of OSS. In this paper, the optimised switching strategy is introduced first, and then, the LTspice model of SiC MOSFET is established in detail and verifies the feasibility of the OSS through half-bridge circuit simulation. Finally, the test platform is built using a programmable gate drive module (2ASC-12A1HP). Through a 400 V/30 A double-pulse test, the practicality of the OSS is verified. The experiments show that the OSS can greatly improve the switching performance of SiC MOSFETs.
published_date	2024-11-08T09:59:24Z
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score	10.744276

A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy

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