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Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation / IAN GILBERT

Swansea University Author: IAN GILBERT

Abstract

Semiconductor devices are fabricated at Vishay Newport and in particular, power MOSFETs.These power MOSFETS possesses vast income potential for the company now and in the immediate future as the devices are used in numerous electric appliances and gadgets. In the future, the market in Power MOSFETs...

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Published: Swansea University, Wales, UK 2024
Institution: Swansea University
Degree level: Master of Research
Degree name: MSc by Research
Supervisor: Jennings, M., and Egwebe, A.
URI: https://cronfa.swan.ac.uk/Record/cronfa68126
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first_indexed 2024-10-31T13:59:10Z
last_indexed 2024-10-31T13:59:10Z
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recordtype RisThesis
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spelling v2 68126 2024-10-31 Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation f23afe5ea2b9b4d8ecd6af06bed3f40b IAN GILBERT IAN GILBERT true false 2024-10-31 Semiconductor devices are fabricated at Vishay Newport and in particular, power MOSFETs.These power MOSFETS possesses vast income potential for the company now and in the immediate future as the devices are used in numerous electric appliances and gadgets. In the future, the market in Power MOSFETs will be expected, to generate considerable output revenues due to the increase in technologies such as artificial intelligence (AI), robotics, electric appliances, also various electrical gadgets and the growing necessity for hybrid / electric vehicles globally, the power MOSFET market is expected to increase in lucrative opportunities. However, the devices are susceptible to Electrostatic Discharge (ESD) that can cause undesirable effects and loss of potential revenue to the company due to damage on reticle etc. or loss die on the wafer and damaged die in other company products causing these products to fail. The intention of this thesis is to minimise the negative impact on productivity caused by static discharge in the production environment by using risk mitigation to lessen or remove the effects of ESD on reticles wafers etc., therefore increasing the “good” die on wafers so improving company output. The research conducted for this thesis is based on an interim report conducted for the company as a basis for this thesis, and also on various papers on the subjects of electrostatic discharge and the human body model. E-Thesis Swansea University, Wales, UK Power, MOSFET, Electrostatic, Human Body Model. 8 10 2024 2024-10-08 A selection of content is redacted or is partially redacted from this thesis to protect sensitive and personal information. COLLEGE NANME COLLEGE CODE Swansea University Jennings, M., and Egwebe, A. Master of Research MSc by Research VISHAY Newport Limited VISHAY Newport Limited 2024-10-31T13:59:12.7270967 2024-10-31T13:33:03.0393085 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering IAN GILBERT 1 68126__32810__e8cbd38339d94113beb97e7e3943952d.pdf 2024_Gilbert_I.final.68126.pdf 2024-10-31T13:54:37.9383034 Output 3794107 application/pdf E-Thesis – open access true Copyright: The Author, Ian Gilbert, 2024 true eng
title Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
spellingShingle Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
IAN GILBERT
title_short Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
title_full Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
title_fullStr Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
title_full_unstemmed Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
title_sort Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation
author_id_str_mv f23afe5ea2b9b4d8ecd6af06bed3f40b
author_id_fullname_str_mv f23afe5ea2b9b4d8ecd6af06bed3f40b_***_IAN GILBERT
author IAN GILBERT
author2 IAN GILBERT
format E-Thesis
publishDate 2024
institution Swansea University
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Semiconductor devices are fabricated at Vishay Newport and in particular, power MOSFETs.These power MOSFETS possesses vast income potential for the company now and in the immediate future as the devices are used in numerous electric appliances and gadgets. In the future, the market in Power MOSFETs will be expected, to generate considerable output revenues due to the increase in technologies such as artificial intelligence (AI), robotics, electric appliances, also various electrical gadgets and the growing necessity for hybrid / electric vehicles globally, the power MOSFET market is expected to increase in lucrative opportunities. However, the devices are susceptible to Electrostatic Discharge (ESD) that can cause undesirable effects and loss of potential revenue to the company due to damage on reticle etc. or loss die on the wafer and damaged die in other company products causing these products to fail. The intention of this thesis is to minimise the negative impact on productivity caused by static discharge in the production environment by using risk mitigation to lessen or remove the effects of ESD on reticles wafers etc., therefore increasing the “good” die on wafers so improving company output. The research conducted for this thesis is based on an interim report conducted for the company as a basis for this thesis, and also on various papers on the subjects of electrostatic discharge and the human body model.
published_date 2024-10-08T13:59:42Z
_version_ 1814438275734044672
score 11.036684

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