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Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures

Alexander M. Hinz Orcid Logo, Saptarsi Ghosh Orcid Logo, Simon M. Fairclough, James T. Griffiths, Menno J. Kappers, Rachel A. Oliver, David J. Wallis Orcid Logo

Journal of Crystal Growth, Volume: 624, Start page: 127420

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1016/j.jcrysgro.2023.127420

Abstract

This paper presents the growth of thin GaN capping layers on standard AlGaN HEMT structures. It has been found that the reliable growth of thin () GaN capping layers by organometallic vapour phase epitaxy is challenging as GaN is unstable at high growth temperatures even in atmospheres with high amm...

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Published in: Journal of Crystal Growth
ISSN: 0022-0248
Published: Elsevier BV 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa66877
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last_indexed 2024-11-25T14:19:04Z
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spelling 2024-08-15T14:36:15.1417718 v2 66877 2024-06-23 Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM This paper presents the growth of thin GaN capping layers on standard AlGaN HEMT structures. It has been found that the reliable growth of thin () GaN capping layers by organometallic vapour phase epitaxy is challenging as GaN is unstable at high growth temperatures even in atmospheres with high ammonia partial pressure. To overcome this challenge a growth strategy based on the controlled desorption of GaN has been adopted. By intentionally growing thicker than desired capping layers and controlling the desorption during the cool down after growth it is feasible to reliably grow high quality GaN capping layers with a specific target thickness. The development of the controlled desorption process has been simplified by predicting the desorption based on the computer controlled cooling ramp and the temperature dependent GaN desorption rate. The latter was obtained by analysing in-situ reflectance traces for relevant growth conditions. Moreover, examples on how to identify exposed AlGaN barriers, i.e. without intact GaN caps, by TEM and AFM are presented. Journal Article Journal of Crystal Growth 624 127420 Elsevier BV 0022-0248 A3. desorption; A3. metalorganic vapour phase epitaxy; B1. nitrides; B3. semiconducting III-V materials; B3. high electron mobility transistors; B3. reliability 15 12 2023 2023-12-15 10.1016/j.jcrysgro.2023.127420 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee Dr. Alexander Hinz would like to acknowledge funding for his position at the University of Cambridge in the framework of a Research Fellowship by the Deutsche Forschungsgemeinschaft (DFG), Germany under the grant number HI2141/1-1 . Prof. D J Wallis would like to acknowledge support of EPSRC, United Kingdom fellowship EP/N01202X/2 . Funding from EP/P00945X/1 and the EPSRC National Epitaxy Facility, United Kingdom is also acknowledged. 2024-08-15T14:36:15.1417718 2024-06-23T20:12:39.0891374 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Alexander M. Hinz 0000-0002-8845-0086 1 Saptarsi Ghosh 0000-0003-1685-6228 2 Simon M. Fairclough 3 James T. Griffiths 4 Menno J. Kappers 5 Rachel A. Oliver 6 David J. Wallis 0000-0002-0475-7583 7 66877__31130__a719915b8f484662be3604e47fbc1473.pdf 66877.VoR.pdf 2024-08-15T14:34:34.4304016 Output 3162465 application/pdf Version of Record true © 2023 The Author(s). This is an open access article under the CC BY license. true eng http://creativecommons.org/licenses/by/4.0/
title Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
spellingShingle Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
Saptarsi Ghosh
title_short Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
title_full Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
title_fullStr Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
title_full_unstemmed Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
title_sort Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 Alexander M. Hinz
Saptarsi Ghosh
Simon M. Fairclough
James T. Griffiths
Menno J. Kappers
Rachel A. Oliver
David J. Wallis
format Journal article
container_title Journal of Crystal Growth
container_volume 624
container_start_page 127420
publishDate 2023
institution Swansea University
issn 0022-0248
doi_str_mv 10.1016/j.jcrysgro.2023.127420
publisher Elsevier BV
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description This paper presents the growth of thin GaN capping layers on standard AlGaN HEMT structures. It has been found that the reliable growth of thin () GaN capping layers by organometallic vapour phase epitaxy is challenging as GaN is unstable at high growth temperatures even in atmospheres with high ammonia partial pressure. To overcome this challenge a growth strategy based on the controlled desorption of GaN has been adopted. By intentionally growing thicker than desired capping layers and controlling the desorption during the cool down after growth it is feasible to reliably grow high quality GaN capping layers with a specific target thickness. The development of the controlled desorption process has been simplified by predicting the desorption based on the computer controlled cooling ramp and the temperature dependent GaN desorption rate. The latter was obtained by analysing in-situ reflectance traces for relevant growth conditions. Moreover, examples on how to identify exposed AlGaN barriers, i.e. without intact GaN caps, by TEM and AFM are presented.
published_date 2023-12-15T08:26:15Z
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