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A thermally erasable silicon oxide layer for molecular beam epitaxy

Yaonan Hou Orcid Logo, Hui Jia Orcid Logo, Mingchu Tang Orcid Logo, Aleksander Buseth Mosberg, Quentin M Ramasse, Ilias Skandalos, Yasir Noori Orcid Logo, Junjie Yang Orcid Logo, Huiyun Liu Orcid Logo, Alwyn Seeds, Frederic Gardes

Journal of Physics D: Applied Physics, Volume: 55, Issue: 42

Swansea University Author: Yaonan Hou Orcid Logo

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DOI (Published version): 10.1088/1361-6463/ac8600

Abstract

We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon (Si) technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various characterization techniques, w...

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Published in: Journal of Physics D: Applied Physics
ISSN: 0022-3727 1361-6463
Published: IOP Publishing 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa65281
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spelling 2024-04-10T14:04:12.7023849 v2 65281 2023-12-14 A thermally erasable silicon oxide layer for molecular beam epitaxy 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2023-12-14 ACEM We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon (Si) technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various characterization techniques, we demonstrate that a chemically grown silicon oxide layer is the most promising candidate for subsequent removal in an ultra-high vacuum chamber at a temperature of 1000 ∘C, without making use of a reducing agent. As a demonstration, a tensile-strained Ge(100) layer is epitaxially grown on the deoxidised wafer with an atomically flat surface and a low threading dislocation density of 3.33 × 108 cm−2. Our findings reveal that the ultra-thin oxide layer grown using a chemical approach is able to protect Si surfaces for subsequent MBE growth of Ge. This approach is promising for the growth of III/V-on-Si (using Ge as a buffer) and all group-IV related epitaxy for integration on the Si photonics platforms. Journal Article Journal of Physics D: Applied Physics 55 42 IOP Publishing 0022-3727 1361-6463 19 8 2022 2022-08-19 10.1088/1361-6463/ac8600 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee The authors are grateful for support from the UKRI-EPSRC Programme Grant 'QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)'. Electron microscopy experiments were carried out at SuperSTEM, the National Research Facility for Advanced Electron Microscopy, also supported by UKRI-EPSRC. For the purpose of open access, the author has applied a Creative Commons Attribution* (CCBY) licence to any Author Accepted Manuscript version arising. 2024-04-10T14:04:12.7023849 2023-12-14T15:51:39.4550233 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 0000-0001-9461-3841 1 Hui Jia 0000-0002-8325-3948 2 Mingchu Tang 0000-0001-6626-3389 3 Aleksander Buseth Mosberg 4 Quentin M Ramasse 5 Ilias Skandalos 6 Yasir Noori 0000-0001-5285-8779 7 Junjie Yang 0000-0002-8385-2449 8 Huiyun Liu 0000-0002-7654-8553 9 Alwyn Seeds 10 Frederic Gardes 11 65281__29978__7a833c7d5962427ebff1d705ca34d850.pdf 65281.VOR.pdf 2024-04-10T14:02:21.9690966 Output 2716161 application/pdf Version of Record true Released under the terms of the Creative Commons Attribution 4.0 licence. true eng https://creativecommons.org/licenses/by/4.0/
title A thermally erasable silicon oxide layer for molecular beam epitaxy
spellingShingle A thermally erasable silicon oxide layer for molecular beam epitaxy
Yaonan Hou
title_short A thermally erasable silicon oxide layer for molecular beam epitaxy
title_full A thermally erasable silicon oxide layer for molecular beam epitaxy
title_fullStr A thermally erasable silicon oxide layer for molecular beam epitaxy
title_full_unstemmed A thermally erasable silicon oxide layer for molecular beam epitaxy
title_sort A thermally erasable silicon oxide layer for molecular beam epitaxy
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
Hui Jia
Mingchu Tang
Aleksander Buseth Mosberg
Quentin M Ramasse
Ilias Skandalos
Yasir Noori
Junjie Yang
Huiyun Liu
Alwyn Seeds
Frederic Gardes
format Journal article
container_title Journal of Physics D: Applied Physics
container_volume 55
container_issue 42
publishDate 2022
institution Swansea University
issn 0022-3727
1361-6463
doi_str_mv 10.1088/1361-6463/ac8600
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon (Si) technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various characterization techniques, we demonstrate that a chemically grown silicon oxide layer is the most promising candidate for subsequent removal in an ultra-high vacuum chamber at a temperature of 1000 ∘C, without making use of a reducing agent. As a demonstration, a tensile-strained Ge(100) layer is epitaxially grown on the deoxidised wafer with an atomically flat surface and a low threading dislocation density of 3.33 × 108 cm−2. Our findings reveal that the ultra-thin oxide layer grown using a chemical approach is able to protect Si surfaces for subsequent MBE growth of Ge. This approach is promising for the growth of III/V-on-Si (using Ge as a buffer) and all group-IV related epitaxy for integration on the Si photonics platforms.
published_date 2022-08-19T20:27:21Z
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