Journal article 83 views
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
,
Hui Jia ,
Yaonan Hou ,
Xueying Yu,
Haotian Zeng,
Junjie Yang,
Xingzhao Yan,
Ilias Skandalos,
Huiwen Deng,
Jae-Seong Park,
Wei Li ,
Ang Li,
Khalil El Hajraoui,
Quentin Ramasse,
Frederic Gardes,
Mingchu Tang,
Siming Chen ,
Alwyn Seeds,
Huiyun Liu
Journal of Physics D: Applied Physics, Volume: 57, Issue: 25, Start page: 255101
Swansea University Author:
Yaonan Hou
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1088/1361-6463/ad31e0
Abstract
High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III–V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substra...
| Published in: | Journal of Physics D: Applied Physics |
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| ISSN: | 0022-3727 1361-6463 |
| Published: |
IOP Publishing
2024
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa67691 |
| Abstract: |
High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III–V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder the motion of defects. In this work, we demonstrate the effectiveness of an optimised two-step growth recipe structure on a (111)-faceted V-groove silicon substrate with a 350 nm flat ridge. This strategy successfully reduces the threading dislocation (TD) density while growing a 1 μm Ge buffer layer via molecular beam epitaxy. As a result, a high-quality buffer is produced with a low TD density on the order of 107 cm−2 and a surface roughness below 1 nm. |
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| Keywords: |
V-groove, aspect ratio trapping, annealing |
| College: |
Faculty of Science and Engineering |
| Funders: |
This work wassupported by the UKEngineering and Physical Sciences Research Council (EP/P006973/1, EP/R029075/1, EP/T028475/1, EP/V036327/1, EP/V048732/1, W021080/1, and EP/X015300/1, EP/S024441/1). |
| Issue: |
25 |
| Start Page: |
255101 |