Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

Oklobia, Ochai; Jones, Steven; Kartopu, Giray; Lu, Dingyuan; Miller, Wes; Mallick, Rajni; Li, Xiaoping; Xiong, Gang; Kornienko, Vladislav; Abbas, Ali; Bliss, Martin; Walls, John Michael; C., Stuart J.

doi:10.1109/jphotov.2022.3195086

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Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

Ochai Oklobia, Steven Jones, Giray Kartopu, Dingyuan Lu, Wes Miller, Rajni Mallick, Xiaoping Li, Gang Xiong, Vladislav Kornienko, Ali Abbas, Martin Bliss

, John Michael Walls, Stuart J. C. Irvine

IEEE Journal of Photovoltaics, Volume: 12, Issue: 6, Pages: 1 - 7

Swansea University Authors: Ochai Oklobia, Steven Jones

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DOI (Published version): 10.1109/jphotov.2022.3195086

Abstract

In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is...

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Published in:	IEEE Journal of Photovoltaics
ISSN:	2156-3381 2156-3403
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2022
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spelling	2023-01-05T13:25:51.8891623 v2 61279 2022-09-20 Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC d447e8d0345473fa625813546bccc592 Ochai Oklobia Ochai Oklobia true false 47e09369e843bd6b9bec0f27016e9f70 Steven Jones Steven Jones true false 2022-09-20 MTLS In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved. Journal Article IEEE Journal of Photovoltaics 12 6 1 7 Institute of Electrical and Electronics Engineers (IEEE) 2156-3381 2156-3403 22 8 2022 2022-08-22 10.1109/jphotov.2022.3195086 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University Engineering and Physical Sciences Research Council, U.K. (Grant Number: EP/W000555/1); 10.13039/501100008530-European Regional Development Fund; Welsh European Funding Office 2023-01-05T13:25:51.8891623 2022-09-20T08:36:23.0598200 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Ochai Oklobia 1 Steven Jones 2 Giray Kartopu 3 Dingyuan Lu 4 Wes Miller 5 Rajni Mallick 6 Xiaoping Li 7 Gang Xiong 8 Vladislav Kornienko 9 Ali Abbas 10 Martin Bliss 0000-0002-1837-3548 11 John Michael Walls 12 Stuart J. C. Irvine 13 61279__25449__7bb335f01da442968aa113042914f082.pdf 61279_VoR.pdf 2022-10-13T13:39:59.0731497 Output 2945226 application/pdf Version of Record true This work is licensed under a Creative Commons Attribution 4.0 License true eng https://creativecommons.org/licenses/by/4.0/
title	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC
spellingShingle	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC Ochai Oklobia Steven Jones
title_short	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC
title_full	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC
title_fullStr	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC
title_full_unstemmed	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC
title_sort	Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC
author_id_str_mv	d447e8d0345473fa625813546bccc592 47e09369e843bd6b9bec0f27016e9f70
author_id_fullname_str_mv	d447e8d0345473fa625813546bccc592_*_Ochai Oklobia 47e09369e843bd6b9bec0f27016e9f70_*_Steven Jones
author	Ochai Oklobia Steven Jones
author2	Ochai Oklobia Steven Jones Giray Kartopu Dingyuan Lu Wes Miller Rajni Mallick Xiaoping Li Gang Xiong Vladislav Kornienko Ali Abbas Martin Bliss John Michael Walls Stuart J. C. Irvine
format	Journal article
container_title	IEEE Journal of Photovoltaics
container_volume	12
container_issue	6
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publishDate	2022
institution	Swansea University
issn	2156-3381 2156-3403
doi_str_mv	10.1109/jphotov.2022.3195086
publisher	Institute of Electrical and Electronics Engineers (IEEE)
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description	In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.
published_date	2022-08-22T04:20:00Z
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Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

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