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Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

Ochai Oklobia, Steven Jones, Giray Kartopu, Dingyuan Lu, Wes Miller, Rajni Mallick, Xiaoping Li, Gang Xiong, Vladislav Kornienko, Ali Abbas, Martin Bliss Orcid Logo, John Michael Walls, Stuart J. C. Irvine

IEEE Journal of Photovoltaics, Volume: 12, Issue: 6, Pages: 1 - 7

Swansea University Authors: Ochai Oklobia, Steven Jones

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DOI (Published version): 10.1109/jphotov.2022.3195086

Abstract

In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is...

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Published in: IEEE Journal of Photovoltaics
ISSN: 2156-3381 2156-3403
Published: Institute of Electrical and Electronics Engineers (IEEE) 2022
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa61279
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Abstract: In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.
College: Faculty of Science and Engineering
Funders: Engineering and Physical Sciences Research Council, U.K. (Grant Number: EP/W000555/1); 10.13039/501100008530-European Regional Development Fund; Welsh European Funding Office
Issue: 6
Start Page: 1
End Page: 7

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