No Cover Image

Journal article 559 views 139 downloads

Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes

Douglas H. Vieira, Nafiseh Badiei, Jonathan Evans, Neri Alves, Jeff Kettle, Lijie Li Orcid Logo

IEEE Transactions on Electron Devices, Volume: 67, Issue: 11, Pages: 4947 - 4952

Swansea University Authors: Nafiseh Badiei, Jonathan Evans, Lijie Li Orcid Logo

Check full text

DOI (Published version): 10.1109/ted.2020.3022341

Abstract

β -Ga 2 O 3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the sc...

Full description

Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa55168
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2020-09-13T12:02:45Z
last_indexed 2020-11-10T04:12:17Z
id cronfa55168
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-11-09T09:42:32.7058476</datestamp><bib-version>v2</bib-version><id>55168</id><entry>2020-09-13</entry><title>Improvement of the Deep UV Sensor Performance of a &#x3B2; -Ga&#x2082;O&#x2083; Photodiode by Coupling of Two Planar Diodes</title><swanseaauthors><author><sid>c82cd1b82759801ab0045cb9f0047b06</sid><firstname>Nafiseh</firstname><surname>Badiei</surname><name>Nafiseh Badiei</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>3a4152e0539a5ba25b3bbb9f76033cf7</sid><ORCID/><firstname>Jonathan</firstname><surname>Evans</surname><name>Jonathan Evans</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-09-13</date><abstract>&#x3B2; -Ga 2 O 3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps ( &#x3BC;A ), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7&#xD7;107 with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors.</abstract><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>67</volume><journalNumber>11</journalNumber><paginationStart>4947</paginationStart><paginationEnd>4952</paginationEnd><publisher>Institute of Electrical and Electronics Engineers (IEEE)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords/><publishedDay>1</publishedDay><publishedMonth>11</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-11-01</publishedDate><doi>10.1109/ted.2020.3022341</doi><url/><notes/><college>COLLEGE NANME</college><CollegeCode>COLLEGE CODE</CollegeCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-11-09T09:42:32.7058476</lastEdited><Created>2020-09-13T12:58:09.1046830</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Douglas H.</firstname><surname>Vieira</surname><order>1</order></author><author><firstname>Nafiseh</firstname><surname>Badiei</surname><order>2</order></author><author><firstname>Jonathan</firstname><surname>Evans</surname><orcid/><order>3</order></author><author><firstname>Neri</firstname><surname>Alves</surname><order>4</order></author><author><firstname>Jeff</firstname><surname>Kettle</surname><order>5</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>6</order></author></authors><documents><document><filename>55168__18145__e951c2d70e19447594fbb492631158ae.pdf</filename><originalFilename>manuscript - final.pdf</originalFilename><uploaded>2020-09-13T13:01:44.9205381</uploaded><type>Output</type><contentLength>1382774</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><copyrightCorrect>true</copyrightCorrect><language>English</language></document></documents><OutputDurs/></rfc1807>
spelling 2020-11-09T09:42:32.7058476 v2 55168 2020-09-13 Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes c82cd1b82759801ab0045cb9f0047b06 Nafiseh Badiei Nafiseh Badiei true false 3a4152e0539a5ba25b3bbb9f76033cf7 Jonathan Evans Jonathan Evans true false ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2020-09-13 β -Ga 2 O 3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps ( μA ), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7×107 with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors. Journal Article IEEE Transactions on Electron Devices 67 11 4947 4952 Institute of Electrical and Electronics Engineers (IEEE) 0018-9383 1557-9646 1 11 2020 2020-11-01 10.1109/ted.2020.3022341 COLLEGE NANME COLLEGE CODE Swansea University 2020-11-09T09:42:32.7058476 2020-09-13T12:58:09.1046830 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Douglas H. Vieira 1 Nafiseh Badiei 2 Jonathan Evans 3 Neri Alves 4 Jeff Kettle 5 Lijie Li 0000-0003-4630-7692 6 55168__18145__e951c2d70e19447594fbb492631158ae.pdf manuscript - final.pdf 2020-09-13T13:01:44.9205381 Output 1382774 application/pdf Accepted Manuscript true true English
title Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
spellingShingle Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
Nafiseh Badiei
Jonathan Evans
Lijie Li
title_short Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
title_full Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
title_fullStr Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
title_full_unstemmed Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
title_sort Improvement of the Deep UV Sensor Performance of a β -Ga₂O₃ Photodiode by Coupling of Two Planar Diodes
author_id_str_mv c82cd1b82759801ab0045cb9f0047b06
3a4152e0539a5ba25b3bbb9f76033cf7
ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv c82cd1b82759801ab0045cb9f0047b06_***_Nafiseh Badiei
3a4152e0539a5ba25b3bbb9f76033cf7_***_Jonathan Evans
ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Nafiseh Badiei
Jonathan Evans
Lijie Li
author2 Douglas H. Vieira
Nafiseh Badiei
Jonathan Evans
Neri Alves
Jeff Kettle
Lijie Li
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 67
container_issue 11
container_start_page 4947
publishDate 2020
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2020.3022341
publisher Institute of Electrical and Electronics Engineers (IEEE)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description β -Ga 2 O 3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it has been reported that the photocurrent was in the scale of microamps ( μA ), which normally requires sophisticated signal processing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantial increase in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity and responsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7×107 with ultralow dark current, when measured in the reverse bias. The results confirm that the approach of coupling two Schottky diodes has enormous potential for improving the optical performance of deep UV sensors.
published_date 2020-11-01T04:09:11Z
_version_ 1763753645034176512
score 11.013148

Similar Items