Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)

Burton, Matthew; Boyle, Connor; Liu, Tianjun; McGettrick, James; Nandhakumar, Iris; Fenwick, Oliver; Carnie, Matt

doi:10.1021/acsami.0c06026

Journal article 796 views 138 downloads

Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)

Matthew Burton

, Connor Boyle, Tianjun Liu, James McGettrick

, Iris Nandhakumar, Oliver Fenwick, Matt Carnie

ACS Applied Materials & Interfaces, Volume: 12, Issue: 25, Pages: 28232 - 28238

Swansea University Authors: Matthew Burton , Connor Boyle, James McGettrick , Matt Carnie

PDF | Version of Record

This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Download (2.41MB)

Check full text

DOI (Published version): 10.1021/acsami.0c06026

Abstract

Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by seve...

Full description

Published in:	ACS Applied Materials & Interfaces
ISSN:	1944-8244 1944-8252
Published:	American Chemical Society (ACS) 2020
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa54520
Tags:	Add Tag No Tags, Be the first to tag this record!

first_indexed	2020-06-19T19:09:53Z
last_indexed	2020-10-02T03:15:25Z
id	cronfa54520
recordtype	SURis
fullrecord	<?xml version="1.0"?><rfc1807><datestamp>2020-10-01T15:06:52.1874274</datestamp><bib-version>v2</bib-version><id>54520</id><entry>2020-06-12</entry><title>Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)</title><swanseaauthors><author><sid>2deade2806e39b1f749e9cf67ac640b2</sid><ORCID>0000-0002-0376-6322</ORCID><firstname>Matthew</firstname><surname>Burton</surname><name>Matthew Burton</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>091575e810a0a086dba7f8fa89a49c81</sid><firstname>Connor</firstname><surname>Boyle</surname><name>Connor Boyle</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>bdbacc591e2de05180e0fd3cc13fa480</sid><ORCID>0000-0002-7719-2958</ORCID><firstname>James</firstname><surname>McGettrick</surname><name>James McGettrick</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>73b367694366a646b90bb15db32bb8c0</sid><ORCID>0000-0002-4232-1967</ORCID><firstname>Matt</firstname><surname>Carnie</surname><name>Matt Carnie</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-06-12</date><deptcode>MTLS</deptcode><abstract>Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by several methods, but so far none of these have concerned the electrodeposition of SnSe. In this work, stoichiometric SnSe was successfully electrodeposited at −0.50 V vs SCE as shown by EDX, XPS, UPS, and XRD. The full ZT of the electrodeposits were then measured. This was done by both a delamination technique to measure the Seebeck coefficient and electrical conductivity which showed a peak power factor of 4.2 and 5.8 μW m–1 K–2 for the as deposited and heat-treated films, respectively. A novel modified transient 3ω method was used to measure the thermal conductivity of the deposited films on the deposition substrate. This revealed the thermal conductivity to be similar to the ultralow thermal conductivity of single crystal SnSe, with a value of 0.34 W m–1 K–1 being observed at 313 K.</abstract><type>Journal Article</type><journal>ACS Applied Materials & Interfaces</journal><volume>12</volume><journalNumber>25</journalNumber><paginationStart>28232</paginationStart><paginationEnd>28238</paginationEnd><publisher>American Chemical Society (ACS)</publisher><issnPrint>1944-8244</issnPrint><issnElectronic>1944-8252</issnElectronic><keywords>Thermal conductivity,Thin films,Crystal structure,Deposition,Electrical conductivity</keywords><publishedDay>24</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-06-24</publishedDate><doi>10.1021/acsami.0c06026</doi><url/><notes/><college>COLLEGE NANME</college><department>Materials Science and Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MTLS</DepartmentCode><institution>Swansea University</institution><apcterm/><funders>UKRI, EP/N020863/1</funders><lastEdited>2020-10-01T15:06:52.1874274</lastEdited><Created>2020-06-12T00:00:00.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Materials Science and Engineering</level></path><authors><author><firstname>Matthew</firstname><surname>Burton</surname><orcid>0000-0002-0376-6322</orcid><order>1</order></author><author><firstname>Connor</firstname><surname>Boyle</surname><order>2</order></author><author><firstname>Tianjun</firstname><surname>Liu</surname><order>3</order></author><author><firstname>James</firstname><surname>McGettrick</surname><orcid>0000-0002-7719-2958</orcid><order>4</order></author><author><firstname>Iris</firstname><surname>Nandhakumar</surname><order>5</order></author><author><firstname>Oliver</firstname><surname>Fenwick</surname><order>6</order></author><author><firstname>Matt</firstname><surname>Carnie</surname><orcid>0000-0002-4232-1967</orcid><order>7</order></author></authors><documents><document><filename>54520__17688__3dc95ab5f92d41e897c79fffdd731e02.pdf</filename><originalFilename>54520.pdf</originalFilename><uploaded>2020-07-10T11:24:00.1939739</uploaded><type>Output</type><contentLength>2524152</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.</documentNotes><copyrightCorrect>true</copyrightCorrect></document></documents><OutputDurs/></rfc1807>
spelling	2020-10-01T15:06:52.1874274 v2 54520 2020-06-12 Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) 2deade2806e39b1f749e9cf67ac640b2 0000-0002-0376-6322 Matthew Burton Matthew Burton true false 091575e810a0a086dba7f8fa89a49c81 Connor Boyle Connor Boyle true false bdbacc591e2de05180e0fd3cc13fa480 0000-0002-7719-2958 James McGettrick James McGettrick true false 73b367694366a646b90bb15db32bb8c0 0000-0002-4232-1967 Matt Carnie Matt Carnie true false 2020-06-12 MTLS Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by several methods, but so far none of these have concerned the electrodeposition of SnSe. In this work, stoichiometric SnSe was successfully electrodeposited at −0.50 V vs SCE as shown by EDX, XPS, UPS, and XRD. The full ZT of the electrodeposits were then measured. This was done by both a delamination technique to measure the Seebeck coefficient and electrical conductivity which showed a peak power factor of 4.2 and 5.8 μW m–1 K–2 for the as deposited and heat-treated films, respectively. A novel modified transient 3ω method was used to measure the thermal conductivity of the deposited films on the deposition substrate. This revealed the thermal conductivity to be similar to the ultralow thermal conductivity of single crystal SnSe, with a value of 0.34 W m–1 K–1 being observed at 313 K. Journal Article ACS Applied Materials & Interfaces 12 25 28232 28238 American Chemical Society (ACS) 1944-8244 1944-8252 Thermal conductivity,Thin films,Crystal structure,Deposition,Electrical conductivity 24 6 2020 2020-06-24 10.1021/acsami.0c06026 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University UKRI, EP/N020863/1 2020-10-01T15:06:52.1874274 2020-06-12T00:00:00.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Matthew Burton 0000-0002-0376-6322 1 Connor Boyle 2 Tianjun Liu 3 James McGettrick 0000-0002-7719-2958 4 Iris Nandhakumar 5 Oliver Fenwick 6 Matt Carnie 0000-0002-4232-1967 7 54520__17688__3dc95ab5f92d41e897c79fffdd731e02.pdf 54520.pdf 2020-07-10T11:24:00.1939739 Output 2524152 application/pdf Version of Record true This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. true
title	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
spellingShingle	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe) Matthew Burton Connor Boyle James McGettrick Matt Carnie
title_short	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
title_full	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
title_fullStr	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
title_full_unstemmed	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
title_sort	Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)
author_id_str_mv	2deade2806e39b1f749e9cf67ac640b2 091575e810a0a086dba7f8fa89a49c81 bdbacc591e2de05180e0fd3cc13fa480 73b367694366a646b90bb15db32bb8c0
author_id_fullname_str_mv	2deade2806e39b1f749e9cf67ac640b2_*_Matthew Burton 091575e810a0a086dba7f8fa89a49c81__Connor Boyle bdbacc591e2de05180e0fd3cc13fa480__James McGettrick 73b367694366a646b90bb15db32bb8c0_*_Matt Carnie
author	Matthew Burton Connor Boyle James McGettrick Matt Carnie
author2	Matthew Burton Connor Boyle Tianjun Liu James McGettrick Iris Nandhakumar Oliver Fenwick Matt Carnie
format	Journal article
container_title	ACS Applied Materials & Interfaces
container_volume	12
container_issue	25
container_start_page	28232
publishDate	2020
institution	Swansea University
issn	1944-8244 1944-8252
doi_str_mv	10.1021/acsami.0c06026
publisher	American Chemical Society (ACS)
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str	1
active_str	0
description	Tin selenide (SnSe) has attracted much attention in the thermoelectric community since the discovery of the record figure of merit (ZT) of 2.6 in single crystal tin selenide in 2014. There have been many reports since of the thermoelectric characterization of SnSe synthesized or manufactured by several methods, but so far none of these have concerned the electrodeposition of SnSe. In this work, stoichiometric SnSe was successfully electrodeposited at −0.50 V vs SCE as shown by EDX, XPS, UPS, and XRD. The full ZT of the electrodeposits were then measured. This was done by both a delamination technique to measure the Seebeck coefficient and electrical conductivity which showed a peak power factor of 4.2 and 5.8 μW m–1 K–2 for the as deposited and heat-treated films, respectively. A novel modified transient 3ω method was used to measure the thermal conductivity of the deposited films on the deposition substrate. This revealed the thermal conductivity to be similar to the ultralow thermal conductivity of single crystal SnSe, with a value of 0.34 W m–1 K–1 being observed at 313 K.
published_date	2020-06-24T04:08:07Z
_version_	1763753577228009472
score	11.013686

Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe)

Similar Items