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Conference Paper/Proceeding/Abstract 919 views 156 downloads

Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells

Zhengfei Wei, Adam Pockett, James D. Mcgettrick, Chung Man Fung, Owen Guy Orcid Logo, Matt Carnie Orcid Logo, Trystan Watson Orcid Logo

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Pages: 2767 - 2770

Swansea University Authors: Zhengfei Wei, Adam Pockett, Owen Guy Orcid Logo, Matt Carnie Orcid Logo, Trystan Watson Orcid Logo

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DOI (Published version): 10.1109/pvsc.2018.8547605

Abstract

In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help t...

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Published in: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
ISBN: 978-1-5386-8530-3 978-1-5386-8529-7
ISSN: 0160-8371
Published: WAIKOLOA, HAWAII, USA IEEE 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa48393
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spelling v2 48393 2019-01-23 Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells e4ae52ae9b63b7b6da834c460ee3bb2d Zhengfei Wei Zhengfei Wei true false de06433fccc0514dcf45aa9d1fc5c60f Adam Pockett Adam Pockett true false c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 73b367694366a646b90bb15db32bb8c0 0000-0002-4232-1967 Matt Carnie Matt Carnie true false a210327b52472cfe8df9b8108d661457 0000-0002-8015-1436 Trystan Watson Trystan Watson true false 2019-01-23 MTLS In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help to investigate carrier dynamics. By using T-JV techniques, we are able to observe the dominant recombination mechanism occurring at the back contact interface that could lead to significant open-circuit voltage (V oc ) loss. In combination with T-TPV, TPV decay time mapping across temperature in a range of 213-313 K and light intensity range of 0.01-1 suns was used to explore interface related recombination and charge transport for CZTS solar cell devices. Conference Paper/Proceeding/Abstract 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC &amp; 34th EU PVSEC) 2767 2770 IEEE WAIKOLOA, HAWAII, USA 978-1-5386-8530-3 978-1-5386-8529-7 0160-8371 1 6 2018 2018-06-01 10.1109/pvsc.2018.8547605 http://dx.doi.org/10.1109/pvsc.2018.8547605 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2023-06-02T15:17:16.9004769 2019-01-23T11:31:21.2045481 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Zhengfei Wei 1 Adam Pockett 2 James D. Mcgettrick 3 Chung Man Fung 4 Owen Guy 0000-0002-6449-4033 5 Matt Carnie 0000-0002-4232-1967 6 Trystan Watson 0000-0002-8015-1436 7 0048393-23012019113545.pdf wei2018v6.pdf 2019-01-23T11:35:45.2100000 Output 401037 application/pdf Accepted Manuscript true 2019-01-23T00:00:00.0000000 true eng
title Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
spellingShingle Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
Zhengfei Wei
Adam Pockett
Owen Guy
Matt Carnie
Trystan Watson
title_short Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
title_full Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
title_fullStr Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
title_full_unstemmed Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
title_sort Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu&lt;inf&gt;2&lt;/inf&gt; ZnSnS&lt;inf&gt;4&lt;/inf&gt; solar cells
author_id_str_mv e4ae52ae9b63b7b6da834c460ee3bb2d
de06433fccc0514dcf45aa9d1fc5c60f
c7fa5949b8528e048c5b978005f66794
73b367694366a646b90bb15db32bb8c0
a210327b52472cfe8df9b8108d661457
author_id_fullname_str_mv e4ae52ae9b63b7b6da834c460ee3bb2d_***_Zhengfei Wei
de06433fccc0514dcf45aa9d1fc5c60f_***_Adam Pockett
c7fa5949b8528e048c5b978005f66794_***_Owen Guy
73b367694366a646b90bb15db32bb8c0_***_Matt Carnie
a210327b52472cfe8df9b8108d661457_***_Trystan Watson
author Zhengfei Wei
Adam Pockett
Owen Guy
Matt Carnie
Trystan Watson
author2 Zhengfei Wei
Adam Pockett
James D. Mcgettrick
Chung Man Fung
Owen Guy
Matt Carnie
Trystan Watson
format Conference Paper/Proceeding/Abstract
container_title 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC &amp; 34th EU PVSEC)
container_start_page 2767
publishDate 2018
institution Swansea University
isbn 978-1-5386-8530-3
978-1-5386-8529-7
issn 0160-8371
doi_str_mv 10.1109/pvsc.2018.8547605
publisher IEEE
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
url http://dx.doi.org/10.1109/pvsc.2018.8547605
document_store_str 1
active_str 0
description In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help to investigate carrier dynamics. By using T-JV techniques, we are able to observe the dominant recombination mechanism occurring at the back contact interface that could lead to significant open-circuit voltage (V oc ) loss. In combination with T-TPV, TPV decay time mapping across temperature in a range of 213-313 K and light intensity range of 0.01-1 suns was used to explore interface related recombination and charge transport for CZTS solar cell devices.
published_date 2018-06-01T15:17:15Z
_version_ 1767600748422496256
score 11.013148

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