Conference Paper/Proceeding/Abstract 919 views 156 downloads
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells
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Matt Carnie ,
Trystan Watson
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Pages: 2767 - 2770
Swansea University Authors:
Zhengfei Wei, Adam Pockett, Owen Guy , Matt Carnie , Trystan Watson
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DOI (Published version): 10.1109/pvsc.2018.8547605
Abstract
In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help t...
| Published in: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) |
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| ISBN: | 978-1-5386-8530-3 978-1-5386-8529-7 |
| ISSN: | 0160-8371 |
| Published: |
WAIKOLOA, HAWAII, USA
IEEE
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa48393 |
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| Abstract: |
In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help to investigate carrier dynamics. By using T-JV techniques, we are able to observe the dominant recombination mechanism occurring at the back contact interface that could lead to significant open-circuit voltage (V oc ) loss. In combination with T-TPV, TPV decay time mapping across temperature in a range of 213-313 K and light intensity range of 0.01-1 suns was used to explore interface related recombination and charge transport for CZTS solar cell devices. |
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| College: |
Faculty of Science and Engineering |
| Start Page: |
2767 |
| End Page: |
2770 |