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Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications
Olujide Adenekan,
Paul Holland,
Karol Kalna 
Microelectronics Journal, Volume: 81, Pages: 94 - 100
Swansea University Authors:
Paul Holland, Karol Kalna
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DOI (Published version): 10.1016/j.mejo.2018.09.007
Abstract
The design and optimisation of a non-planar super-junction (SJ) Si MOSFET based on SOI technology for low voltage rating applications (below 100 V) is carried out with physically based commercial 3-D TCAD device simulations using Silvaco. We calibrate drift-diffusion simulations to experimental char...
| Published in: | Microelectronics Journal |
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| ISSN: | 0026-2692 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa44949 |
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| Abstract: |
The design and optimisation of a non-planar super-junction (SJ) Si MOSFET based on SOI technology for low voltage rating applications (below 100 V) is carried out with physically based commercial 3-D TCAD device simulations using Silvaco. We calibrate drift-diffusion simulations to experimental characteristics of the SJ multi-gate MOSFET (SJ-MGFET) aiming at improving drive current, breakdown voltage (BV), and specific on-resistance (Ron,sp). We investigate variations in the device architecture and improve device performance by optimizing doping profile under charge imbalance. The SJ-MGFET, using a folded alternating U-shaped n/p– SJ drift region pillar width of 0.3 μm with a trench depth of 2.7 μm achieves specific on-resistance (Ron,sp) of 0.21 mΩ.cm2 at a BV of 65 V. In comparison with conventional planar gate SJ-LDMOSFETs, the optimised SJ-MGFET gives 68% reduction in Ron,sp and 41% increase in a saturation drain current at a drain voltage of 5 V and a gate voltage of 10 V. |
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| Keywords: |
Super-junction (SJ), Multi-gate (MG), Power MOSFETs, Silicon-on-insulator (SOI), Breakdown voltage (BV), Specific on-resistance |
| College: |
Faculty of Science and Engineering |
| Start Page: |
94 |
| End Page: |
100 |