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Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices

Qiyuan Zhang, Xiaolong Feng, Lijie Li Orcid Logo

Journal of Physics D: Applied Physics, Volume: 51, Issue: 32, Start page: 324006

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1088/1361-6463/aad067

Abstract

Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transpo...

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Published in: Journal of Physics D: Applied Physics
ISSN: 0022-3727 1361-6463
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa40926
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first_indexed 2018-07-03T19:34:31Z
last_indexed 2018-09-10T18:54:25Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2018-09-10T15:41:08.1380229</datestamp><bib-version>v2</bib-version><id>40926</id><entry>2018-07-03</entry><title>Theoretical study of piezotronic metal&#x2013;insulator&#x2013;semiconductor tunnel devices</title><swanseaauthors><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2018-07-03</date><deptcode>EEEG</deptcode><abstract>Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transport, separation or recombination processes at the interface or junction of the semiconductor devices. Based on the piezotronic theory, we present a one-dimensional model for the metal-insulator-semiconductor (MIS) tunnel diode based on the piezoelectric semiconductor. Analytical solutions of piezoelectric modulated tunneling are described to reveal the piezotronic effect on the MIS tunnel junction. Numerical simulation of the carrier transport properties is provided for demonstrating the piezotronic effect on MIS tunnel devices.</abstract><type>Journal Article</type><journal>Journal of Physics D: Applied Physics</journal><volume>51</volume><journalNumber>32</journalNumber><paginationStart>324006</paginationStart><publisher/><issnPrint>0022-3727</issnPrint><issnElectronic>1361-6463</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-12-31</publishedDate><doi>10.1088/1361-6463/aad067</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-09-10T15:41:08.1380229</lastEdited><Created>2018-07-03T15:21:08.1477361</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Qiyuan</firstname><surname>Zhang</surname><order>1</order></author><author><firstname>Xiaolong</firstname><surname>Feng</surname><order>2</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>3</order></author></authors><documents><document><filename>0040926-03072018152151.pdf</filename><originalFilename>JPD_accepted.pdf</originalFilename><uploaded>2018-07-03T15:21:51.4700000</uploaded><type>Output</type><contentLength>1220982</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2019-07-02T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2018-09-10T15:41:08.1380229 v2 40926 2018-07-03 Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2018-07-03 EEEG Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transport, separation or recombination processes at the interface or junction of the semiconductor devices. Based on the piezotronic theory, we present a one-dimensional model for the metal-insulator-semiconductor (MIS) tunnel diode based on the piezoelectric semiconductor. Analytical solutions of piezoelectric modulated tunneling are described to reveal the piezotronic effect on the MIS tunnel junction. Numerical simulation of the carrier transport properties is provided for demonstrating the piezotronic effect on MIS tunnel devices. Journal Article Journal of Physics D: Applied Physics 51 32 324006 0022-3727 1361-6463 31 12 2018 2018-12-31 10.1088/1361-6463/aad067 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2018-09-10T15:41:08.1380229 2018-07-03T15:21:08.1477361 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Qiyuan Zhang 1 Xiaolong Feng 2 Lijie Li 0000-0003-4630-7692 3 0040926-03072018152151.pdf JPD_accepted.pdf 2018-07-03T15:21:51.4700000 Output 1220982 application/pdf Accepted Manuscript true 2019-07-02T00:00:00.0000000 true eng
title Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
spellingShingle Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
Lijie Li
title_short Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
title_full Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
title_fullStr Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
title_full_unstemmed Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
title_sort Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Qiyuan Zhang
Xiaolong Feng
Lijie Li
format Journal article
container_title Journal of Physics D: Applied Physics
container_volume 51
container_issue 32
container_start_page 324006
publishDate 2018
institution Swansea University
issn 0022-3727
1361-6463
doi_str_mv 10.1088/1361-6463/aad067
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transport, separation or recombination processes at the interface or junction of the semiconductor devices. Based on the piezotronic theory, we present a one-dimensional model for the metal-insulator-semiconductor (MIS) tunnel diode based on the piezoelectric semiconductor. Analytical solutions of piezoelectric modulated tunneling are described to reveal the piezotronic effect on the MIS tunnel junction. Numerical simulation of the carrier transport properties is provided for demonstrating the piezotronic effect on MIS tunnel devices.
published_date 2018-12-31T03:52:08Z
_version_ 1763752572347219968
score 11.013148

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