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C-V characteristics of piezotronic metal-insulator-semiconductor transistor

Jiayang Zheng, Yongli Zhou, Yaming Zhang, Lijie Li Orcid Logo, Yan Zhang

Science Bulletin, Volume: 65, Issue: 2, Pages: 161 - 168

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.scib.2019.11.001

Abstract

Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junc...

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Published in: Science Bulletin
ISSN: 2095-9273
Published: Elsevier BV 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa52520
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Abstract: Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices.
Keywords: Piezotronic effect; Capacitance-voltage (C-V) characteristics; Metal-insulator-semiconductor; Distribution width of strain-induced piezoelectric charges
College: Faculty of Science and Engineering
Issue: 2
Start Page: 161
End Page: 168

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