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Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures

K. Ahmeda, B. Ubochi, B. Benbakhti, S. J. Duffy, A. Soltani, W. Zhang, Karol Kalna Orcid Logo

IEEE Access, Volume: 5, Issue: October, Pages: 20946 - 20952

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/ACCESS.2017.2755984

Abstract

Abstract:The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN Transmission Line Model (TLM) heterostructures with a scaled source-to-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental data using an electrothe...

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Published in: IEEE Access
ISSN: 2169-3536
Published: New York IEEE 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa36147
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Abstract: Abstract:The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN Transmission Line Model (TLM) heterostructures with a scaled source-to-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental data using an electrothermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of ~ 566 K - 373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7 %, 10 %, and 17 % during a scaling of the source-to-drain distance in the 12 μm, 8μm and 4 μm TLM heterostructures, respectively, when compared to the largest 18 μm heterostructure.
Keywords: III-V Nitrides, Self-Heating, Polarization, TLM Structures, Electro-Thermal Transport Simulations
College: Faculty of Science and Engineering
Issue: October
Start Page: 20946
End Page: 20952

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