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STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs

K.S. Teng, P.R. Dunstan, S.P. Wilks, R.H. Williams, Vincent Teng Orcid Logo

Applied Surface Science, Volume: 235, Issue: 3, Pages: 313 - 321

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1016/j.apsusc.2004.05.104

Published in: Applied Surface Science
ISSN: 01694332
Published: 2004
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URI: https://cronfa.swan.ac.uk/Record/cronfa31371
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first_indexed 2016-12-06T20:37:52Z
last_indexed 2018-02-09T05:18:12Z
id cronfa31371
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-12-06T16:56:18.8421095</datestamp><bib-version>v2</bib-version><id>31371</id><entry>2016-12-06</entry><title>STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2016-12-06</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>Applied Surface Science</journal><volume>235</volume><journalNumber>3</journalNumber><paginationStart>313</paginationStart><paginationEnd>321</paginationEnd><publisher/><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>01694332</issnPrint><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2004</publishedYear><publishedDate>2004-12-31</publishedDate><doi>10.1016/j.apsusc.2004.05.104</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-12-06T16:56:18.8421095</lastEdited><Created>2016-12-06T16:56:18.8577080</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>K.S.</firstname><surname>Teng</surname><order>1</order></author><author><firstname>P.R.</firstname><surname>Dunstan</surname><order>2</order></author><author><firstname>S.P.</firstname><surname>Wilks</surname><order>3</order></author><author><firstname>R.H.</firstname><surname>Williams</surname><order>4</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2016-12-06T16:56:18.8421095 v2 31371 2016-12-06 STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2016-12-06 EEEG Journal Article Applied Surface Science 235 3 313 321 01694332 31 12 2004 2004-12-31 10.1016/j.apsusc.2004.05.104 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-12-06T16:56:18.8421095 2016-12-06T16:56:18.8577080 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering K.S. Teng 1 P.R. Dunstan 2 S.P. Wilks 3 R.H. Williams 4 Vincent Teng 0000-0003-4325-8573 5
title STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
spellingShingle STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
Vincent Teng
title_short STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
title_full STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
title_fullStr STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
title_full_unstemmed STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
title_sort STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 K.S. Teng
P.R. Dunstan
S.P. Wilks
R.H. Williams
Vincent Teng
format Journal article
container_title Applied Surface Science
container_volume 235
container_issue 3
container_start_page 313
publishDate 2004
institution Swansea University
issn 01694332
doi_str_mv 10.1016/j.apsusc.2004.05.104
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2004-12-31T03:38:19Z
_version_ 1763751703357685760
score 11.037056

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