Journal article 1323 views
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications
Soroush Faramehr,
Karol Kalna 
,
Petar Igić,
Petar Igic
,
Petar Igić,
Petar Igic
Semiconductor Science and Technology, Volume: 29, Issue: 11, Start page: 115020
Swansea University Authors:
Karol Kalna , Petar Igic
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1088/0268-1242/29/11/115020
Abstract
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications
| Published in: | Semiconductor Science and Technology |
|---|---|
| Published: |
2014
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa21204 |
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| first_indexed |
2015-05-08T02:10:42Z |
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2018-02-09T04:58:31Z |
| id |
cronfa21204 |
| recordtype |
SURis |
| fullrecord |
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| spelling |
2015-05-07T11:24:48.5075424 v2 21204 2015-05-07 Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2015-05-07 EEEG Journal Article Semiconductor Science and Technology 29 11 115020 31 12 2014 2014-12-31 10.1088/0268-1242/29/11/115020 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-07T11:24:48.5075424 2015-05-07T11:24:19.5219992 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Soroush Faramehr 1 Karol Kalna 0000-0002-6333-9189 2 Petar Igić 3 Petar Igic 0000-0001-8150-8815 4 |
| title |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| spellingShingle |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications Karol Kalna Petar Igic |
| title_short |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_full |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_fullStr |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_full_unstemmed |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_sort |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 e085acc259a367abc89338346a150186 |
| author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna e085acc259a367abc89338346a150186_***_Petar Igic |
| author |
Karol Kalna Petar Igic |
| author2 |
Soroush Faramehr Karol Kalna Petar Igić Petar Igic |
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Journal article |
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Semiconductor Science and Technology |
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29 |
| container_issue |
11 |
| container_start_page |
115020 |
| publishDate |
2014 |
| institution |
Swansea University |
| doi_str_mv |
10.1088/0268-1242/29/11/115020 |
| college_str |
Faculty of Science and Engineering |
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|
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facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised |
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0 |
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| published_date |
2014-12-31T03:25:07Z |
| _version_ |
1763750872018321408 |
| score |
11.036837 |