Journal article 1249 views
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications
Soroush Faramehr,
Karol Kalna 
,
Petar Igić,
Petar Igic
,
Petar Igić,
Petar Igic
Semiconductor Science and Technology, Volume: 29, Issue: 11, Start page: 115020
Swansea University Authors:
Karol Kalna , Petar Igic
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1088/0268-1242/29/11/115020
Abstract
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications
| Published in: | Semiconductor Science and Technology |
|---|---|
| Published: |
2014
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa21204 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| first_indexed |
2015-05-08T02:10:42Z |
|---|---|
| last_indexed |
2018-02-09T04:58:31Z |
| id |
cronfa21204 |
| recordtype |
SURis |
| fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2015-05-07T11:24:48.5075424</datestamp><bib-version>v2</bib-version><id>21204</id><entry>2015-05-07</entry><title>Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>e085acc259a367abc89338346a150186</sid><ORCID>0000-0001-8150-8815</ORCID><firstname>Petar</firstname><surname>Igic</surname><name>Petar Igic</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2015-05-07</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>Semiconductor Science and Technology</journal><volume>29</volume><journalNumber>11</journalNumber><paginationStart>115020</paginationStart><publisher/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2014</publishedYear><publishedDate>2014-12-31</publishedDate><doi>10.1088/0268-1242/29/11/115020</doi><url/><notes></notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2015-05-07T11:24:48.5075424</lastEdited><Created>2015-05-07T11:24:19.5219992</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Uncategorised</level></path><authors><author><firstname>Soroush</firstname><surname>Faramehr</surname><order>1</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>2</order></author><author><firstname>Petar</firstname><surname>Igić</surname><order>3</order></author><author><firstname>Petar</firstname><surname>Igic</surname><orcid>0000-0001-8150-8815</orcid><order>4</order></author></authors><documents/><OutputDurs/></rfc1807> |
| spelling |
2015-05-07T11:24:48.5075424 v2 21204 2015-05-07 Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2015-05-07 EEEG Journal Article Semiconductor Science and Technology 29 11 115020 31 12 2014 2014-12-31 10.1088/0268-1242/29/11/115020 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-07T11:24:48.5075424 2015-05-07T11:24:19.5219992 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Soroush Faramehr 1 Karol Kalna 0000-0002-6333-9189 2 Petar Igić 3 Petar Igic 0000-0001-8150-8815 4 |
| title |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| spellingShingle |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications Karol Kalna Petar Igic |
| title_short |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_full |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_fullStr |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_full_unstemmed |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| title_sort |
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications |
| author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 e085acc259a367abc89338346a150186 |
| author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna e085acc259a367abc89338346a150186_***_Petar Igic |
| author |
Karol Kalna Petar Igic |
| author2 |
Soroush Faramehr Karol Kalna Petar Igić Petar Igic |
| format |
Journal article |
| container_title |
Semiconductor Science and Technology |
| container_volume |
29 |
| container_issue |
11 |
| container_start_page |
115020 |
| publishDate |
2014 |
| institution |
Swansea University |
| doi_str_mv |
10.1088/0268-1242/29/11/115020 |
| college_str |
Faculty of Science and Engineering |
| hierarchytype |
|
| hierarchy_top_id |
facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised |
| document_store_str |
0 |
| active_str |
0 |
| published_date |
2014-12-31T03:25:07Z |
| _version_ |
1763750872018321408 |
| score |
11.017084 |