Journal article 1249 views
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications
Soroush Faramehr,
Karol Kalna 
,
Petar Igić,
Petar Igic
,
Petar Igić,
Petar Igic
Semiconductor Science and Technology, Volume: 29, Issue: 11, Start page: 115020
Swansea University Authors:
Karol Kalna , Petar Igic
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1088/0268-1242/29/11/115020
Abstract
Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications
| Published in: | Semiconductor Science and Technology |
|---|---|
| Published: |
2014
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa21204 |
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| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
11 |
| Start Page: |
115020 |