Conference Paper/Proceeding/Abstract 1185 views
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
Pages: 321 - 324
Swansea University Author: Karol Kalna
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DOI (Published version): 10.1109/asdam.2010.5666362
Abstract
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs
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2010
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URI: | https://cronfa.swan.ac.uk/Record/cronfa14754 |
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2013-05-30T11:56:27.7701501 v2 14754 2013-09-03 Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Conference Paper/Proceeding/Abstract 321 324 31 12 2010 2010-12-31 10.1109/asdam.2010.5666362 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-05-30T11:56:27.7701501 2013-09-03T06:36:50.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Aynul Islam 1 Karol Kalna 0000-0002-6333-9189 2 |
title |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs |
spellingShingle |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs Karol Kalna |
title_short |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs |
title_full |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs |
title_fullStr |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs |
title_full_unstemmed |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs |
title_sort |
Monte Carlo simulations of channel scaling to ultimate limit in Si and In<inf>0.3</inf>Ga<inf>0.7</inf>As bulk MOSFETs |
author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 |
author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
author |
Karol Kalna |
author2 |
Aynul Islam Karol Kalna |
format |
Conference Paper/Proceeding/Abstract |
container_start_page |
321 |
publishDate |
2010 |
institution |
Swansea University |
doi_str_mv |
10.1109/asdam.2010.5666362 |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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published_date |
2010-12-31T03:16:54Z |
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1763750355400654848 |
score |
11.037581 |