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A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

N Janković, D Pantić, S Batcup, P Igić, Petar Igic Orcid Logo

Applied Physics Letters, Volume: 100, Issue: 26, Start page: 263507

Swansea University Author: Petar Igic Orcid Logo

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DOI (Published version): 10.1063/1.4731630

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2012
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URI: https://cronfa.swan.ac.uk/Record/cronfa11868
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first_indexed 2013-07-23T12:07:02Z
last_indexed 2018-02-09T04:41:44Z
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spelling 2016-08-17T10:59:45.8601788 v2 11868 2013-09-03 A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2013-09-03 EEN Journal Article Applied Physics Letters 100 26 263507 0003-6951 31 12 2012 2012-12-31 10.1063/1.4731630 LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far. COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2016-08-17T10:59:45.8601788 2013-09-03T06:16:17.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised N Janković 1 D Pantić 2 S Batcup 3 P Igić 4 Petar Igic 0000-0001-8150-8815 5
title A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
spellingShingle A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
Petar Igic
title_short A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_full A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_fullStr A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_full_unstemmed A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_sort A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Petar Igic
author Petar Igic
author2 N Janković
D Pantić
S Batcup
P Igić
Petar Igic
format Journal article
container_title Applied Physics Letters
container_volume 100
container_issue 26
container_start_page 263507
publishDate 2012
institution Swansea University
issn 0003-6951
doi_str_mv 10.1063/1.4731630
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 0
active_str 0
published_date 2012-12-31T03:13:44Z
_version_ 1763750156258246656
score 11.013148

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