Journal article 872 views
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
N Janković,
D Pantić,
S Batcup,
P Igić,
Petar Igic 
Applied Physics Letters, Volume: 100, Issue: 26, Start page: 263507
Swansea University Author:
Petar Igic
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.4731630
Abstract
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
| Published in: | Applied Physics Letters |
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| ISSN: | 0003-6951 |
| Published: |
2012
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa11868 |
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| Item Description: |
LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
26 |
| Start Page: |
263507 |