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Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations

Antonio Martinez Muniz, Antonio Martinez Muniz Orcid Logo

IEEE Electron Device Letters, Volume: 33, Issue: 2

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/led.2011.2177634

Published in: IEEE Electron Device Letters
Published: 2012
URI: https://cronfa.swan.ac.uk/Record/cronfa10577
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first_indexed 2013-07-23T12:06:47Z
last_indexed 2018-02-09T04:39:28Z
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spelling 2013-06-10T12:01:08.4447659 v2 10577 2013-09-03 Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article IEEE Electron Device Letters 33 2 31 12 2012 2012-12-31 10.1109/led.2011.2177634 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-10T12:01:08.4447659 2013-09-03T06:39:02.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
spellingShingle Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
Antonio Martinez Muniz
title_short Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
title_full Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
title_fullStr Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
title_full_unstemmed Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
title_sort Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
Antonio Martinez Muniz
format Journal article
container_title IEEE Electron Device Letters
container_volume 33
container_issue 2
publishDate 2012
institution Swansea University
doi_str_mv 10.1109/led.2011.2177634
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2012-12-31T03:12:00Z
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score 11.013148

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