Journal article 1168 views
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
A Martinez,
N Seoane,
A.R Brown,
J.R Barker,
A Asenov,
Antonio Martinez Muniz 
IEEE Transactions on Nanotechnology, Volume: 8, Issue: 5, Pages: 603 - 610
Swansea University Author:
Antonio Martinez Muniz
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/tnano.2009.2020980
Abstract
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
| Published in: | IEEE Transactions on Nanotechnology |
|---|---|
| ISSN: | 1536-125X 1941-0085 |
| Published: |
2009
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa10566 |
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2013-07-23T12:06:45Z |
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| last_indexed |
2018-02-09T04:39:27Z |
| id |
cronfa10566 |
| recordtype |
SURis |
| fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2016-08-17T13:51:12.8356539</datestamp><bib-version>v2</bib-version><id>10566</id><entry>2013-09-03</entry><title>3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>ACEM</deptcode><abstract></abstract><type>Journal Article</type><journal>IEEE Transactions on Nanotechnology</journal><volume>8</volume><journalNumber>5</journalNumber><paginationStart>603</paginationStart><paginationEnd>610</paginationEnd><publisher/><issnPrint>1536-125X</issnPrint><issnElectronic>1941-0085</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2009</publishedYear><publishedDate>2009-12-31</publishedDate><doi>10.1109/tnano.2009.2020980</doi><url/><notes>This was part of an initiative between Glasgow University and UCL to combine first principles simulations of materials with device simulation methodologies, in order to produce more predictive simulation results for future solid-state transistors “Meeting the material challenges of nanoCMOS electronics” (GR/S80097/01).</notes><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-08-17T13:51:12.8356539</lastEdited><Created>2013-09-03T06:38:38.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>A</firstname><surname>Martinez</surname><order>1</order></author><author><firstname>N</firstname><surname>Seoane</surname><order>2</order></author><author><firstname>A.R</firstname><surname>Brown</surname><order>3</order></author><author><firstname>J.R</firstname><surname>Barker</surname><order>4</order></author><author><firstname>A</firstname><surname>Asenov</surname><order>5</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>6</order></author></authors><documents/><OutputDurs/></rfc1807> |
| spelling |
2016-08-17T13:51:12.8356539 v2 10566 2013-09-03 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 ACEM Journal Article IEEE Transactions on Nanotechnology 8 5 603 610 1536-125X 1941-0085 31 12 2009 2009-12-31 10.1109/tnano.2009.2020980 This was part of an initiative between Glasgow University and UCL to combine first principles simulations of materials with device simulation methodologies, in order to produce more predictive simulation results for future solid-state transistors “Meeting the material challenges of nanoCMOS electronics” (GR/S80097/01). COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2016-08-17T13:51:12.8356539 2013-09-03T06:38:38.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering A Martinez 1 N Seoane 2 A.R Brown 3 J.R Barker 4 A Asenov 5 Antonio Martinez Muniz 0000-0001-8131-7242 6 |
| title |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor |
| spellingShingle |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor Antonio Martinez Muniz |
| title_short |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor |
| title_full |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor |
| title_fullStr |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor |
| title_full_unstemmed |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor |
| title_sort |
3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor |
| author_id_str_mv |
cd433784251add853672979313f838ec |
| author_id_fullname_str_mv |
cd433784251add853672979313f838ec_***_Antonio Martinez Muniz |
| author |
Antonio Martinez Muniz |
| author2 |
A Martinez N Seoane A.R Brown J.R Barker A Asenov Antonio Martinez Muniz |
| format |
Journal article |
| container_title |
IEEE Transactions on Nanotechnology |
| container_volume |
8 |
| container_issue |
5 |
| container_start_page |
603 |
| publishDate |
2009 |
| institution |
Swansea University |
| issn |
1536-125X 1941-0085 |
| doi_str_mv |
10.1109/tnano.2009.2020980 |
| college_str |
Faculty of Science and Engineering |
| hierarchytype |
|
| hierarchy_top_id |
facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
| document_store_str |
0 |
| active_str |
0 |
| published_date |
2009-12-31T18:21:29Z |
| _version_ |
1821430712377540608 |
| score |
11.047609 |