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3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor

A Martinez, N Seoane, A.R Brown, J.R Barker, A Asenov, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Nanotechnology, Volume: 8, Issue: 5, Pages: 603 - 610

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/tnano.2009.2020980

Published in: IEEE Transactions on Nanotechnology
ISSN: 1536-125X 1941-0085
Published: 2009
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URI: https://cronfa.swan.ac.uk/Record/cronfa10566
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first_indexed 2013-07-23T12:06:45Z
last_indexed 2018-02-09T04:39:27Z
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spelling 2016-08-17T13:51:12.8356539 v2 10566 2013-09-03 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article IEEE Transactions on Nanotechnology 8 5 603 610 1536-125X 1941-0085 31 12 2009 2009-12-31 10.1109/tnano.2009.2020980 This was part of an initiative between Glasgow University and UCL to combine first principles simulations of materials with device simulation methodologies, in order to produce more predictive simulation results for future solid-state transistors “Meeting the material challenges of nanoCMOS electronics” (GR/S80097/01). COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-08-17T13:51:12.8356539 2013-09-03T06:38:38.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering A Martinez 1 N Seoane 2 A.R Brown 3 J.R Barker 4 A Asenov 5 Antonio Martinez Muniz 0000-0001-8131-7242 6
title 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
spellingShingle 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
Antonio Martinez Muniz
title_short 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
title_full 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
title_fullStr 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
title_full_unstemmed 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
title_sort 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 A Martinez
N Seoane
A.R Brown
J.R Barker
A Asenov
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Nanotechnology
container_volume 8
container_issue 5
container_start_page 603
publishDate 2009
institution Swansea University
issn 1536-125X
1941-0085
doi_str_mv 10.1109/tnano.2009.2020980
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:11:58Z
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score 11.013148

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