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Conference Paper/Proceeding/Abstract 863 views

Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs

Manuel Aldegunde, Antonio J Garcia-Loureiro, Natalia Seoane, Asen Asenov, Karol Kalna Orcid Logo

CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009, Pages: 211 - 214

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/SCED.2009.4800468

Published in: CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa9159
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last_indexed 2018-02-09T04:37:55Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2013-06-07T10:14:12.5401137</datestamp><bib-version>v2</bib-version><id>9159</id><entry>2013-09-03</entry><title>Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Conference Paper/Proceeding/Abstract</type><journal>CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009</journal><volume></volume><journalNumber></journalNumber><paginationStart>211</paginationStart><paginationEnd>214</paginationEnd><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2009</publishedYear><publishedDate>2009-12-31</publishedDate><doi>10.1109/SCED.2009.4800468</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-06-07T10:14:12.5401137</lastEdited><Created>2013-09-03T06:36:29.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Manuel</firstname><surname>Aldegunde</surname><order>1</order></author><author><firstname>Antonio J</firstname><surname>Garcia-Loureiro</surname><order>2</order></author><author><firstname>Natalia</firstname><surname>Seoane</surname><order>3</order></author><author><firstname>Asen</firstname><surname>Asenov</surname><order>4</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2013-06-07T10:14:12.5401137 v2 9159 2013-09-03 Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Conference Paper/Proceeding/Abstract CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009 211 214 31 12 2009 2009-12-31 10.1109/SCED.2009.4800468 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-07T10:14:12.5401137 2013-09-03T06:36:29.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Manuel Aldegunde 1 Antonio J Garcia-Loureiro 2 Natalia Seoane 3 Asen Asenov 4 Karol Kalna 0000-0002-6333-9189 5
title Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
spellingShingle Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
Karol Kalna
title_short Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_full Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_fullStr Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_full_unstemmed Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_sort Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Manuel Aldegunde
Antonio J Garcia-Loureiro
Natalia Seoane
Asen Asenov
Karol Kalna
format Conference Paper/Proceeding/Abstract
container_title CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009
container_start_page 211
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/SCED.2009.4800468
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:11:02Z
_version_ 1763749986301902848
score 11.01353

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